This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount !

MTB23P06V

P-CHANNEL TRANSISTOR 60V 23A D2PAK

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: MTB23P06V

Datasheet: MTB23P06V Datasheet (PDF)

Package/Case: TO-263-3

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for MTB23P06V or email to us: Email: [email protected], we will contact you within 12 hours.

Features

  • On–resistance Area Product about One–half that of Standard
  • MOSFETs with New Low Voltage, Low RDS(on)Technology
  • Faster Switching than E–FET Predecessors
  • Features Common to TMOS V and TMOS E–FETS
  • Avalanche Energy Specified
  • IDSSand VDS(on)Specified at Elevated Temperature
  • Static Parameters are the Same for both TMOS V and TMOS E–FET

Specifications

Parameter Value Parameter Value
Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case TO-263-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 23 A
Rds On - Drain-Source Resistance 120 mOhms Vgs - Gate-Source Voltage - 15 V, + 15 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 90 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 62 ns Forward Transconductance - Min 11.5 S
Height 4.83 mm Length 10.29 mm
Product Type MOSFET Rise Time 98.3 ns
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 41 ns
Typical Turn-On Delay Time 13.8 ns Width 9.65 mm
Unit Weight 0.139332 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MTB23P06V is a power MOSFET transistor chip designed for use in a wide range of electronic applications. It offers a low on-resistance and high switching speeds, making it ideal for power management and control in various devices. Its compact size and high efficiency make it popular in power electronics and automotive systems.
  • Equivalent

    The equivalent products of the MTB23P06V chip are Infineon IPB23P06S3L-16, ON Semiconductor NTB23P06T4G, and Vishay Siliconix Si7856DP. These chips have similar specifications and functions as the MTB23P06V chip.
  • Features

    - P-channel MOSFET - Maximum Drain-Source Voltage of 60V - Continuous Drain Current of 23A - Low on-resistance of 33 mΩ - TO-263 package - Suitable for applications in power management, motor control, and battery protection circuits
  • Pinout

    The MTB23P06V is a Dual N-Channel Power MOSFET with a pin count of 8. Pin 1 is the source of the first MOSFET, while pin 8 is the source of the second MOSFET. Pins 3 and 6 are the gates of the two MOSFETs, and pins 4 and 5 are their respective drains.
  • Manufacturer

    The manufacturer of the MTB23P06V is ON Semiconductor. ON Semiconductor is a semiconductor supplier company that designs, manufactures, and markets a wide range of power and signal management, discrete, and custom devices for various industries, including automotive, industrial, and consumer electronics.
  • Application Field

    The MTB23P06V can be used in various applications including automotive, industrial, telecom, and consumer electronics. It is commonly utilized as a power MOSFET in switching circuits, motor control, power supplies, and battery management systems. Its high voltage and current ratings make it suitable for applications requiring efficient power management and control.
  • Package

    The MTB23P06V chip is available in a TO-247 package type, with a P-channel MOSFET form. It has a size of 10mm x 24.6mm x 4.6mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • AO4292E

    AO4292E

    Alpha & Omega Semiconductor Inc.

    High-quality 100V 8A SOIC-8 MOSFET with 23mΩ resi...

  • VQ1004P

    VQ1004P

    Vishay

    VQ1004P by Siliconix

  • STS4DPF30L

    STS4DPF30L

    Stmicroelectronics

    Dual P-channel MOSFET Transistor STS4DPF30L featur...

  • STS9D8NH3LL

    STS9D8NH3LL

    STMicroelectronics

    Dual N-channel 30V MOSFET, with 0.012 Ohm resistan...

  • RFP30P05

    RFP30P05

    Onsemi

    MOSFET Power P-Channel TO-220AB

  • NE3210S01-T1B

    NE3210S01-T1B

    Cel

    High-Frequency NE3210S01-T1B Transistor: Incorpora...