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MTB50P03HDLT4G

Single P-Channel D2PAK Logic Level

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: MTB50P03HDLT4G

Datasheet: MTB50P03HDLT4G Datasheet (PDF)

Package/Case: D2PAK-3

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 6,927 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for MTB50P03HDLT4G or email to us: Email: [email protected], we will contact you within 12 hours.

MTB50P03HDLT4G General Description

Look no further than the MTB50P03HDLT4G Power MOSFET for all your energy-efficient design needs. This MOSFET is not only capable of withstanding high energy in avalanche and commutation modes, but it also features a drain-to-source diode with a fast recovery time. Ideal for use in low voltage, high-speed switching applications such as power supplies, converters, and PWM motor controls, this device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are crucial

MTB50P03HDLT4G

Features

  • Advanced Thermal Management
  • Robust and Reliable Performance
  • Durable Power Supply Options Available
  • High Speed Switching Capability
  • Low Forward Voltage Drop Characteristic
  • Efficient Heat Dissipation Technology

Specifications

Parameter Value Parameter Value
Status Last Shipments Compliance PbAHP
Package Type D2PAK-3 / TO-263-2 Case Outline 418B-04
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 800
ON Target N Channel Polarity P-Channel
Configuration Single V(BR)DSS Min (V) 30
VGS Max (V) 15 VGS(th) Max (V) 2
ID Max (A) 50 PD Max (W) 125
RDS(on) Max @ VGS = 4.5 V (mΩ) 25 Qg Typ @ VGS = 4.5 V (nC) 74
Ciss Typ (pF) 3500

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MTB50P03HDLT4G chip is a P-channel power MOSFET manufactured by ON Semiconductor. It is designed for use in high-performance power management applications, offering low on-resistance and high current handling capabilities. It is commonly used in power supplies, battery protection circuits, and motor control systems.
  • Equivalent

    Some equivalent products of MTB50P03HDLT4G chip are FQB50P03TM, FDS4435BZ, BSS84, BSP92, and NDP6020PL. These chips are N-channel MOSFETs with similar specifications in terms of voltage, current, and power dissipation, making them suitable replacements for the MTB50P03HDLT4G.
  • Features

    - N-channel Power MOSFET - VDS max of 30V - ID max of 41A - Low on-resistance of 6.8mOhm - High power dissipation capability - Suitable for applications requiring high current handling and low conduction losses
  • Pinout

    The MTB50P03HDLT4G is a 3-pin, P-channel MOSFET transistor. Pin count includes gate (pin 1), drain (pin 2), and source (pin 3). It functions as a switch for high-current applications, allowing or blocking the flow of current between the drain and source pins based on the voltage applied to the gate pin.
  • Manufacturer

    The manufacturer of the MTB50P03HDLT4G is ON Semiconductor. ON Semiconductor is a global supplier of energy-efficient semiconductor solutions, offering a comprehensive portfolio of power and signal management, logic, discrete, and custom devices. They specialize in providing products for various industries including automotive, industrial, consumer electronics, and more.
  • Application Field

    The MTB50P03HDLT4G is commonly used in high power switching applications such as power supplies, motor controls, and inverters. It is also suitable for use in battery management systems, DC-DC converters, and other power management circuits requiring high current handling capabilities.
  • Package

    The MTB50P03HDLT4G chip comes in a DPAK-3 package type. It is in a surface mount form and has a size of 10.03mm x 6.90mm x 4.57mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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