Orders Over
$5000MTB50P03HDLT4G
Single P-Channel D2PAK Logic Level
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: Onsemi
Mfr.Part #: MTB50P03HDLT4G
Datasheet: MTB50P03HDLT4G Datasheet (PDF)
Package/Case: D2PAK-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 6,927 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MTB50P03HDLT4G General Description
Look no further than the MTB50P03HDLT4G Power MOSFET for all your energy-efficient design needs. This MOSFET is not only capable of withstanding high energy in avalanche and commutation modes, but it also features a drain-to-source diode with a fast recovery time. Ideal for use in low voltage, high-speed switching applications such as power supplies, converters, and PWM motor controls, this device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are crucial
![MTB50P03HDLT4G MTB50P03HDLT4G](/files/uploads/product/b/b197c85cfe6644e5aa60270dcf349e90.webp)
Features
- Advanced Thermal Management
- Robust and Reliable Performance
- Durable Power Supply Options Available
- High Speed Switching Capability
- Low Forward Voltage Drop Characteristic
- Efficient Heat Dissipation Technology
Specifications
Parameter | Value | Parameter | Value |
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Status | Last Shipments | Compliance | PbAHP |
Package Type | D2PAK-3 / TO-263-2 | Case Outline | 418B-04 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 800 |
ON Target | N | Channel Polarity | P-Channel |
Configuration | Single | V(BR)DSS Min (V) | 30 |
VGS Max (V) | 15 | VGS(th) Max (V) | 2 |
ID Max (A) | 50 | PD Max (W) | 125 |
RDS(on) Max @ VGS = 4.5 V (mΩ) | 25 | Qg Typ @ VGS = 4.5 V (nC) | 74 |
Ciss Typ (pF) | 3500 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MTB50P03HDLT4G chip is a P-channel power MOSFET manufactured by ON Semiconductor. It is designed for use in high-performance power management applications, offering low on-resistance and high current handling capabilities. It is commonly used in power supplies, battery protection circuits, and motor control systems.
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Equivalent
Some equivalent products of MTB50P03HDLT4G chip are FQB50P03TM, FDS4435BZ, BSS84, BSP92, and NDP6020PL. These chips are N-channel MOSFETs with similar specifications in terms of voltage, current, and power dissipation, making them suitable replacements for the MTB50P03HDLT4G. -
Features
- N-channel Power MOSFET - VDS max of 30V - ID max of 41A - Low on-resistance of 6.8mOhm - High power dissipation capability - Suitable for applications requiring high current handling and low conduction losses -
Pinout
The MTB50P03HDLT4G is a 3-pin, P-channel MOSFET transistor. Pin count includes gate (pin 1), drain (pin 2), and source (pin 3). It functions as a switch for high-current applications, allowing or blocking the flow of current between the drain and source pins based on the voltage applied to the gate pin. -
Manufacturer
The manufacturer of the MTB50P03HDLT4G is ON Semiconductor. ON Semiconductor is a global supplier of energy-efficient semiconductor solutions, offering a comprehensive portfolio of power and signal management, logic, discrete, and custom devices. They specialize in providing products for various industries including automotive, industrial, consumer electronics, and more. -
Application Field
The MTB50P03HDLT4G is commonly used in high power switching applications such as power supplies, motor controls, and inverters. It is also suitable for use in battery management systems, DC-DC converters, and other power management circuits requiring high current handling capabilities. -
Package
The MTB50P03HDLT4G chip comes in a DPAK-3 package type. It is in a surface mount form and has a size of 10.03mm x 6.90mm x 4.57mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products