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Orders Over
$5000MUN5233DW1T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
Brands: onsemi
Mfr.Part #: MUN5233DW1T1G
Datasheet: MUN5233DW1T1G Datasheet (PDF)
Package/Case: SOT-363-6
Product Type: Bipolar Transistor Arrays, Pre-Biased
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MUN5233DW1T1G General Description
Elevate your circuit design with the MUN5233DW1T1G, a cutting-edge digital transistor series that redefines simplicity and functionality. Engineered with an integrated bias network, this BRT replaces the traditional external resistor bias network, providing a more efficient and space-saving solution for your applications. By consolidating the transistor and bias resistors into a single device, the MUN5233DW1T1G offers a hassle-free design experience while delivering exceptional performance and reliability. Upgrade your projects with this innovative transistor series and discover the benefits of enhanced cost-effectiveness and streamlined circuit layout
Features
- Faster Time-to-Market
- Increased Efficiency
- Reduced Development Costs
- Improved Customer Experience
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | Bipolar Transistors - Pre-Biased |
| RoHS: | Details | Configuration: | Dual |
| Transistor Polarity: | NPN | Typical Input Resistor: | 4.7 kOhms |
| Typical Resistor Ratio: | 0.1 | Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 | DC Collector/Base Gain hfe Min: | 80 |
| Collector- Emitter Voltage VCEO Max: | 50 V | Continuous Collector Current: | 100 mA |
| Peak DC Collector Current: | 100 mA | Pd - Power Dissipation: | 187 mW |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Series: | MUN5233DW1 | Packaging: | MouseReel |
| Brand: | onsemi | DC Current Gain hFE Max: | 80 at 5 mA at 10 V |
| Height: | 0.9 mm | Length: | 2 mm |
| Product Type: | BJTs - Bipolar Transistors - Pre-Biased | Factory Pack Quantity: | 3000 |
| Subcategory: | Transistors | Width: | 1.25 mm |
| Unit Weight: | 0.000423 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MUN5233DW1T1G chip is a high-performance dual N-channel 30V MOSFET designed for use in power management applications. It features low on-resistance, high current handling capacity, and a compact footprint, making it ideal for applications where efficiency and power density are critical.
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Equivalent
Other equivalent products of the MUN5233DW1T1G chip include MMBT5233, MMBT5233L, and MMBT5233LT1G. These are all NPN Bipolar transistors with similar specifications and performance characteristics, making them suitable substitutes for the MUN5233DW1T1G chip. -
Features
MUN5233DW1T1G is a high-speed, high-power, SMT N-Channel MOSFET with a maximum drain-source voltage of 30V and continuous drain current of 12A. It features low on-resistance, high thermal efficiency, and a compact DFN package, making it suitable for a wide range of power management applications. -
Pinout
The MUN5233DW1T1G is a dual N-channel enhancement mode MOSFET. It has a pin count of 6 and is commonly used in power management applications. It features low on-resistance, high current carrying capability, and is suitable for battery management, DC-DC converters, and motor control circuits. -
Manufacturer
The manufacturer of MUN5233DW1T1G is ON Semiconductor. ON Semiconductor is a Fortune 500 semiconductors supplier company with headquarters in Phoenix, Arizona. The company produces a wide range of semiconductor products used in various industries, including automotive, consumer electronics, and communication systems. -
Application Field
MUN5233DW1T1G is a high-performance, low power, N-channel MOSFET transistor. It is commonly used in applications such as power management, battery charging, motor control, and LED lighting due to its high switching speeds, low on-resistance, and excellent thermal performance. -
Package
The MUN5233DW1T1G chip is a Surface Mount package type with a Dual NPN array configuration. It comes in a DFN-8 form and measures 2mm x 2mm in size.
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