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SOT-363-6

(208 parts in total)
Mfr.Part# Description Manufacturer In Stock Operation
DMC3400SDW-7 N/P-Channel MOSFET Transistor with 30V Voltage and 0.65A/0.45A Current in 6-Pin SOT-363 Configuration Diodes Incorporated 6,000 Add to BOM
MGA-61563-TR1G Amplifies RF signals with 16.6 dB gain Broadcom Limited 6,111 Add to BOM
DMG1016UDW-7 N-Channel and P-Channel Silicon FET Diodes Incorporated 18,000 Add to BOM
BAS70TW-7-F Ultra-fast switching capability makes it ideal for power supplies Diodes Incorporated 8,731 Add to BOM
BCR183S BCR183S offers pre-biased bipolar transistors for streamlined circuit assembly and operation Infineon 3,333 Add to BOM
SI1869DH-T1-E3 The SI1869DH-T1-E3 is a surface mount load switch with level-shift capability, designed for a voltage rating of 20V and a current rating of 1.2A Vishay 9,458 Add to BOM
NTJD5121NT2G MOSFET NFET SC88D 60V 295mA onsemi 9,458 Add to BOM
SBC847BDW1T1G Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9,458 Add to BOM
ABA-53563-TR1G High Gain RF Amplifier AVAGO 5,556 Add to BOM
MGA-82563-BLKG Ideal for use in wireless infrastructure equipment, such as base stations and access point Broadcom Limited 9,354 Add to BOM
BCM857BS-7-F This product is a PNP-type Bipolar Junction Transistor suitable for general-purpose electronic applications Diodes Incorporated 9,458 Add to BOM
DMN5L06DWK-7 Mosfet Array 50V 305mA 250mW Surface Mount SOT-363 Diodes Incorporated 9,458 Add to BOM
UM6K1NTN High-power dual N-channel MOSFET array for robust circuitr Rohm Semiconductor 9,331 Add to BOM
SI1988DH-T1-E3 MOSFET Recommended Alternative SI1922EDH-T1-GE3 Vishay 9,458 Add to BOM
AG203-63G Gain of 20dB at 900MHz RF Amplifier for Frequencies up to 6000MHz qorvo 6,244 Add to BOM
UMD5NTR NPN/PNP complementary pair transistor with high voltage and current capabiliti Rohm Semiconductor 5,136 Add to BOM
SGA0363Z Silicon Germanium Technology for Low Noise Figure qorvo 6,667 Add to BOM
SGA3563Z The SGA3563Z amplifier is a versatile device with a single function, making it ideal for a variety of applications Qorvo 9,458 Add to BOM
RF3024TR7 Rapid frequency tuning with low power consumption Murata 9,458 Add to BOM
MGA-62563-TR1G High Gain RF Amplifier with 3V Input Voltage and 22 dB Amplification Broadcom Limited 9,222 Add to BOM
MGA-68563-TR1G Boost your RF signal with this GaAs driver amplifier RFIC" Broadcom Limited 7,788 Add to BOM
AG303-63G Small-sized Op-Amp with ROHS compliance QORVO 6,667 Add to BOM
ABA-54563-BLKG Amplifier for radio frequency signals up to 3.4 GHz with 23 dB amplification Broadcom Limited 9,742 Add to BOM
ABA-31563-TR1G DC - 3.5 GHz RF Amplifier providing 21.5dB of amplification Broadcom Limited 6,536 Add to BOM
74LVC2G14GW,125 Dual inverting Schmitt trigger with 5 V tolerant input Nexperia 7,365 Add to BOM
UMD2NTR NPN and PNP dual digital transistor with built-in bias resistor, in SOT-363 package Rohm Semiconductor 8,082 Add to BOM
UMD12NTR Specifications: Pack includes 1 NPN and 1 PNP transistors, suitable for various digital applications Rohm Semiconductor 5,585 Add to BOM
MGA-62563-BLKG Ultra-low noise PHEMT-based amp for 6-24 GHz applications Broadcom Limited 5,684 Add to BOM
MGA-61563-BLKG Wide Band Low Power Amplifier, 100MHz Min, 6000MHz Max, GAAS Broadcom Limited 7,499 Add to BOM
MCH6660-TL-W 1.8V Drive MOSFET Pair for P-Channel and N-Channel Applications onsemi 9,458 Add to BOM
SI1926DL-T1-E3 High performance N Channel MOSFET Vishay 5,908 Add to BOM
SI1869DH-T1-GE3 Load Switch with Level-Shift Vishay 9,458 Add to BOM
SI1411DH-T1-GE3 P-Channel 150 V (D-S) MOSFET VISHAY INTERTECHNOLOGY INC 8,223 Add to BOM
SI1965DH-T1-GE3 Dual P-Channel 12 V 390 mO 1.7 nC Power Mosfet - SOT-363 Vishay 9,458 Add to BOM
SI1443EDH-T1-GE3 Surface Mount Transistor Vishay 6,805 Add to BOM
SI1902CDL-T1-GE3 TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Vishay 9,458 Add to BOM
SI1553CDL-T1-GE3 N / P-Channel 20 V 0.39/0.85 O Power Mosfet - SOT-363 (SC-70-6) Vishay 9,458 Add to BOM
SI1539CDL-T1-BE3 Premium quality component for high-reliability electronics project Vishay 9,458 Add to BOM
SI1539CDL-T1-GE3 Specifications: 30 Volts, 0.7 Amps, 0.34 Watts Vishay 5,521 Add to BOM
SI1480DH-T1-GE3 2.6A Drain Current Vishay 9,458 Add to BOM
SI1427EDH-T1-GE3 Advanced power management solution with compact design and high reliability Vishay 9,458 Add to BOM
MUN5314DW1T1G Tape and Reel Packaging: Supplied in tape and reel format, the MUN5314DW1T1G facilitates automated assembly processes for mass production onsemi 9,458 Add to BOM
NLAST4599DFT2G 1 Circuit IC Switch 2:1 25Ohm SC-88/SC70-6/SOT-363 onsemi 9,458 Add to BOM
BC856BDW1T1G Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9,458 Add to BOM
MUN5235DW1T1G Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9,458 Add to BOM
MUN5233DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN onsemi 9,458 Add to BOM
MUN5214DW1T1G Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V onsemi 9,458 Add to BOM
MUN5211DW1T1G The MUN5211DW1T1G is a Surface-Mounted Technology (SMT) component onsemi 9,458 Add to BOM
SMUN5111DW1T1G Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9,458 Add to BOM
SBC857BDW1T1G Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 onsemi 9,458 Add to BOM