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Orders Over
$5000vishay SI1427EDH-T1-GE3
Advanced power management solution with compact design and high reliability
Brands: Vishay
Mfr.Part #: SI1427EDH-T1-GE3
Datasheet: SI1427EDH-T1-GE3 Datasheet (PDF)
Package/Case: SOT-363-6
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI1427EDH-T1-GE3 General Description
P-Channel 20 V 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6
Features
- Surface mount package
- Automotive grade component
- Ruggedized for outdoor use
- EMI shielding effective
Application
- Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - MP3 - GPS
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 2 A | Rds On - Drain-Source Resistance | 165 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 21 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.56 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI1 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 2.3 us |
| Height | 1 mm | Length | 2.1 mm |
| Product Type | MOSFET | Rise Time | 1 us |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 4 us |
| Typical Turn-On Delay Time | 0.09 us | Width | 1.25 mm |
| Part # Aliases | SI1427EDH-T1-BE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI1427EDH-T1-GE3 is a high-efficiency integrated circuit (IC) designed for power conversion applications. It features a low on-resistance and a high current carrying capability, making it suitable for high-power applications such as DC-DC converters and power management systems. With its compact size and high reliability, the SI1427EDH-T1-GE3 is an ideal choice for demanding electronic systems.
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Equivalent
Some equivalent products of SI1427EDH-T1-GE3 chip are IRF123, SI1427DH, and 3DLF123. -
Features
SI1427EDH-T1-GE3 is a dual N-channel MOSFET with a low on-resistance of 27 mΩ and a maximum drain-source voltage of 30V. It has a compact 1.5x1.0mm TSOP-6 package, making it suitable for space-constrained applications. This MOSFET also has a high current-carrying capability, making it ideal for power management in various electronic devices. -
Pinout
SI1427EDH-T1-GE3 is a dual N-channel MOSFET with a total of 8 pins. It is commonly used as a power switch in various electronic applications due to its low on-resistance and high current handling capabilities. -
Manufacturer
SI1427EDH-T1-GE3 is manufactured by Vishay Intertechnology, Inc., a multinational company that produces a wide range of electronic components including semiconductors, optoelectronics, resistors, capacitors, and sensors. Vishay Intertechnology is headquartered in Malvern, Pennsylvania, and has manufacturing facilities in Asia, Europe, and the Americas. -
Application Field
SI1427EDH-T1-GE3 is mainly used in power management applications such as DC/DC converters, point-of-load modules, and POL regulators. It is also suitable for use in LED lighting, portable devices, smart meters, and industrial controls due to its high efficiency, low on-resistance, and compact package design. -
Package
The SI1427EDH-T1-GE3 chip is a P-Channel MOSFET in a PowerPAK® SO-8 package. It has a form factor of Surface Mount and a size of 5mm x 6mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products
