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Orders Over
$5000vishay SI1480DH-T1-GE3
2.6A Drain Current
Brands: Vishay
Mfr.Part #: SI1480DH-T1-GE3
Datasheet: SI1480DH-T1-GE3 Datasheet (PDF)
Package/Case: SOT-363-6
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI1480DH-T1-GE3 General Description
The SI1480DH-T1-GE3 is a cutting-edge field-effect transistor that combines high performance with environmental consciousness. Its Silicon Metal-oxide Semiconductor construction ensures stability and reliability in demanding circuit applications, while the HALOGEN FREE AND ROHS COMPLIANT design sets it apart as a socially responsible choice for electronics manufacturers. With its compact SC-70 package and 6-pin configuration, this transistor is easy to install and versatile enough to meet the needs of various design specifications
Features
- New generation power technology
- Advanced power device solutions
- Silicon-based switching innovations
- Efficient energy transmission systems
- Rugged and reliable performance guaranteed
- High-speed switching and precision control
Application
- Test applications
- Power management
- Renewable energy
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 2.6 A | Rds On - Drain-Source Resistance | 200 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 5 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.8 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 13 ns | Height | 1 mm |
| Length | 2.1 mm | Product Type | MOSFET |
| Rise Time | 45 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 11 ns | Typical Turn-On Delay Time | 15 ns |
| Width | 1.25 mm | Part # Aliases | SI1480DH-T1-BE3 |
| Unit Weight | 0.000265 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI1480DH-T1-GE3 is a power management IC developed by Vishay Siliconix. It is designed for high-efficiency voltage regulation and features an integrated high-side switch and low-side driver, making it ideal for various applications in battery-powered devices, power tools, and industrial control systems.
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Equivalent
Some equivalent products of the SI1480DH-T1-GE3 chip are Infineon BSC010N04LSG, ON Semiconductor NPIC6C596D, and Fairchild Semiconductor FDC6324L. These chips are all Power MOSFETs with similar specifications and performance characteristics. -
Features
1. N-channel Power MOSFET 2. 100V Drain-source voltage 3. 120A continuous drain current 4. Low on-resistance of 5.8mΩ 5. High power density TO-220 package with D2PAK footprint 6. Suitable for high-power applications such as motor control and power supplies -
Pinout
The SI1480DH-T1-GE3 is a dual N-channel MOSFET with a 6-pin DFN package. It is commonly used in power management applications due to its high efficiency and low on-resistance. The pins are typically used for gate, source, and drain connections for each MOSFET. -
Manufacturer
Vishay Intertechnology is the manufacturer of SI1480DH-T1-GE3. It is a global company specializing in the development and production of discrete semiconductors and passive electronic components for a variety of industries including automotive, industrial, consumer, and telecommunications. -
Application Field
SI1480DH-T1-GE3 is commonly used in DC-DC converters, power supplies, and motor drive applications due to its high efficiency and low power loss characteristics. It is also suitable for portable electronics, automotive systems, and industrial equipment where space and energy efficiency are key considerations. -
Package
The SI1480DH-T1-GE3 chip is a Dual N-Channel MOSFET in a PowerPAK® SC-70 package. It is a surface mount form with a size of 2.1mm x 2.0mm.
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