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Orders Over
$5000SI1926DL-T1-E3
High performance N Channel MOSFET
Brands: Vishay
Mfr.Part #: SI1926DL-T1-E3
Datasheet: SI1926DL-T1-E3 Datasheet (PDF)
Package/Case: SOT-363-6
Product Type: FET, MOSFET Arrays
RoHS Status:
Stock Condition: 5,908 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI1926DL-T1-E3 General Description
Mosfet Array 60V 370mA 510mW Surface Mount SC-70-6
Features
- Fast turn-off time
- High power density
- Durable in harsh environments
- Reduced electromagnetic interference
Application
- For all your power needs
- Efficient energy solutions
- Versatile and reliable
- Perfect for any application
- High-performance technology
- Quality you can trust
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 | Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 370 mA | Rds On - Drain-Source Resistance | 1.4 Ohms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 900 pC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 510 mW |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI1 | Brand | Vishay Semiconductors |
| Configuration | Dual | Fall Time | 14 ns |
| Forward Transconductance - Min | 159 mS | Height | 1 mm |
| Length | 2.1 mm | Product Type | MOSFET |
| Rise Time | 12 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 13 ns | Typical Turn-On Delay Time | 6.5 ns |
| Width | 1.25 mm | Part # Aliases | SI1926DL-T1-BE3 SI1926DL-E3 |
| Unit Weight | 0.000265 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI1926DL-T1-E3 is a Power MOSFET designed for use in power management applications. It features a low on-resistance and high current handling capabilities, making it suitable for a wide range of power distribution and conversion tasks. Its small footprint and efficient design make it ideal for compact and energy-efficient electronics.
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Equivalent
The equivalent products of SI1926DL-T1-E3 chip are SI1926DL-T1-GE3 and SI1926DL-GE3. These are similar products manufactured by Vishay Siliconix and have comparable specifications and features. -
Features
SI1926DL-T1-E3 is a 20 V N-Channel MOSFET with a low on-resistance of 4.2 mΩ. It has a high current carrying capacity of 110 A and is suitable for use in power management applications. It comes in a PowerPAK SO-8 package with an eco-friendly, halogen-free design. -
Pinout
The SI1926DL-T1-E3 is a 6-pin power MOSFET transistor. It features 2 pins for gate control, 2 pins for drain connection, and 2 pins for source connection. The transistor is commonly used as a switch in power management applications. -
Manufacturer
Vishay Intertechnology is the manufacturer of the SI1926DL-T1-E3. It is a global electronic components company that produces a wide range of products, including discrete semiconductors, passive components, and integrated circuits. Vishay Intertechnology serves various industries such as automotive, industrial, telecommunications, and consumer electronics. -
Application Field
The SI1926DL-T1-E3 is a high-performance P-channel MOSFET that is commonly used in applications such as power management, load switching, and battery protection circuits. It is ideal for use in portable devices, consumer electronics, automotive systems, and industrial equipment where high efficiency and reliability are required. -
Package
The SI1926DL-T1-E3 chip is a dual N-channel MOSFET transistor in a PowerPAK SO-8 package. It has a PowerPAK SO-8 form with a size of 5mm x 6mm.
We provide high quality products, thoughtful service and after sale guarantee
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