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vishay SI1902CDL-T1-GE3
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
Brands: Vishay
Mfr.Part #: SI1902CDL-T1-GE3
Datasheet: SI1902CDL-T1-GE3 Datasheet (PDF)
Package/Case: SOT-363-6
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: FET, MOSFET Arrays
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 5 | $0.165 | $0.825 |
| 50 | $0.134 | $6.700 |
| 150 | $0.121 | $18.150 |
| 500 | $0.105 | $52.500 |
| 3000 | $0.097 | $291.000 |
| 6000 | $0.093 | $558.000 |
In Stock: 9,458 PCS
SI1902CDL-T1-GE3 General Description
The Vishay SI1902CDL-T1-GE3 is a dual N-channel MOSFET with a drain-source voltage rating of 20V. It is designed to handle a continuous drain current of 1.1A, making it suitable for a variety of low power applications. With its 6-pin configuration, this MOSFET is easy to integrate into circuit designs. Additionally, it is RoHS compliant, ensuring that it meets the latest environmental standards
Features
Application
High speed switching G1 G2Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOT-363-6 |
| Transistor Polarity: | N-Channel | Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V | Id - Continuous Drain Current: | 1.1 A |
| Rds On - Drain-Source Resistance: | 235 mOhms | Vgs - Gate-Source Voltage: | - 12 V, + 12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V | Qg - Gate Charge: | 2 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 420 mW | Channel Mode: | Enhancement |
| Tradename: | TrenchFET | Series: | SI1 |
| Packaging: | MouseReel | Brand: | Vishay Semiconductors |
| Configuration: | Dual | Fall Time: | 10 ns |
| Height: | 0.75 mm | Length: | 2.05 mm |
| Product Type: | MOSFET | Rise Time: | 13 ns |
| Factory Pack Quantity: | 3000 | Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel | Typical Turn-Off Delay Time: | 13 ns |
| Typical Turn-On Delay Time: | 6 ns | Width: | 2.05 mm |
| Part # Aliases: | SI1902CDL-T1-BE3 SI1958DH-T1-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI1902CDL-T1-GE3 chip is a high-performance RF amplifier designed for use in wireless communication and automotive radar applications. It features low noise, high gain, and a wide frequency range, making it ideal for boosting signal strength in various electronic devices.
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Equivalent
The equivalent products of SI1902CDL-T1-GE3 chip are SI1902CDL-T1-GE3GG and SI1902CDL-T1-P2-GE3. These chips are dual N-channel 30V (D-S) MOSFETs with low on-resistance and are commonly used in power management applications. -
Features
SI1902CDL-T1-GE3 is a P-channel MOSFET with a maximum drain-source voltage of -60V, continuous drain current of -6A, and low RDS(on) of 0.12 ohms. It is suitable for use in various applications such as load switching, power management, and battery protection due to its high efficiency and compact size. -
Pinout
The SI1902CDL-T1-GE3 is a dual N-channel integrated circuit with a pin count of 6. Pin 1 is the gate of the first N-channel MOSFET, Pin 2 is the source of the first N-channel MOSFET, Pin 3 is the drain of the first N-channel MOSFET, Pin 4 is the source/common connection, and Pins 5 and 6 are the drain and gate of the second N-channel MOSFET respectively. -
Manufacturer
The manufacturer of SI1902CDL-T1-GE3 is Vishay Siliconix. It is a company that specializes in manufacturing discrete semiconductors and components for electronic devices. Vishay Siliconix is a leading supplier of power MOSFETs, power ICs, and analog switching regulators, catering to a wide range of industries including automotive, industrial, and consumer electronics. -
Application Field
The SI1902CDL-T1-GE3 can be used in a variety of applications such as power management, voltage regulation, battery charging, and other power control circuits. It is suitable for portable electronics, industrial equipment, automotive systems, and other devices that require efficient power management solutions. -
Package
The SI1902CDL-T1-GE3 chip comes in a DFN-6 package type with a size of 2x2 mm and a form of Surface Mount.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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