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vishay SI3440DV-T1-E3
Power Mosfet with 150 V Single N-Channel and 0.375 Ohms - TSOP-6
Brands: Vishay
Mfr.Part #: SI3440DV-T1-E3
Datasheet: SI3440DV-T1-E3 Datasheet (PDF)
Package/Case: TSOP-6
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.869 | $0.869 |
| 10 | $0.720 | $7.200 |
| 30 | $0.647 | $19.410 |
| 100 | $0.572 | $57.200 |
| 500 | $0.467 | $233.500 |
| 1000 | $0.446 | $446.000 |
In Stock: 9,458 PCS
SI3440DV-T1-E3 General Description
The SI3440DV-T1-E3 is a versatile N channel MOSFET that excels in a variety of electronic applications, thanks to its impressive specifications. With a maximum drain-source voltage of 150V and a continuous drain current rating of 1.5A, this transistor delivers reliable performance under demanding conditions. The on-resistance of 400mohm ensures minimal power loss and efficient operation, while the threshold voltage of 4V and test voltage of 20V allow for precise control over switching characteristics. Equipped with 6 pins for easy connectivity, the SI3440DV-T1-E3 is a practical choice for your power management needs
Features
- Rise and fall times as low as 50ns
- High current handling up to 3A
- Silicon-based with robust construction
Application
- Smooth and precise switching
- Enhanced performance capabilities
- Reliable and consistent operation
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | TSOP-6 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
| Id - Continuous Drain Current | 1.5 A | Rds On - Drain-Source Resistance | 375 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 8 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI3 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 15 ns |
| Forward Transconductance - Min | 4.1 S | Product Type | MOSFET |
| Rise Time | 10 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 8 ns |
| Part # Aliases | SI3440DV-E3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI3440DV-T1-E3 is a dual n-channel 30V enhancement mode power MOSFET chip designed for use in DC-DC converters, synchronous rectification, and high frequency switching applications. It features a low on-state resistance, fast switching speed, and a compact 3x3mm PowerPAK SO-8 package for efficient power management in portable devices and other electronics.
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Equivalent
The equivalent products of SI3440DV-T1-E3 chip are the SI3440D-C-FT, SI3440A-DV-T1-E3, and SI3440DV-T1-GE3. -
Features
The SI3440DV-T1-E3 is a dual N-channel power MOSFET with a low on-resistance and fast switching speeds. It has a high current handling capability and operates at a low voltage. This device is suitable for use in power management applications and can help improve efficiency in various electronic systems. -
Pinout
SI3440DV-T1-E3 is a dual n-channel MOSFET with 8 pins in a DFN package. The pins are: 1. Gate 1 2. Source 1 3. Drain 1 4. NC 5. Gate 2 6. Source 2 7. Drain 2 8. VS It is commonly used in power management applications. -
Manufacturer
SI3440DV-T1-E3 is manufactured by Vishay Intertechnology. Vishay Intertechnology is a global company that produces discrete semiconductors and passive electronic components. The company offers a wide range of products including diodes, capacitors, resistors, and inductors. Vishay Intertechnology serves various industries such as automotive, industrial, consumer electronics, and telecommunications. -
Application Field
SI3440DV-T1-E3 is commonly used in applications such as LED lighting, automotive lighting, and general lighting controls. It is a high-speed, low voltage, low-current, dual-channel smart load switch ideal for protecting sensitive electronic devices from overcurrent and overvoltage events. -
Package
The SI3440DV-T1-E3 chip is a surface mount package, available in a form of tape and reel. It has a compact size, measuring 3mm x 3mm, making it suitable for applications where space is limited.
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