This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Orders Over

$5000
Get a $50 Discount !

SI3493DDV-T1-GE3

20 Volt Power MOSFET

ISO14001 ISO9001 DUNS

Brands: Vishay Siliconix

Mfr.Part #: SI3493DDV-T1-GE3

Datasheet: SI3493DDV-T1-GE3 Datasheet (PDF)

Package/Case: TSOP-6

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 9,182 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for SI3493DDV-T1-GE3 or email to us: Email: [email protected], we will contact you within 12 hours.

SI3493DDV-T1-GE3 General Description

P-Channel 20 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Features

  • Exceptional temperature tolerance
  • Low noise operation
  • Improved electromagnetic compatibility (EMC)
  • Limited to no radiation interference

Application

SWITCHING

Specifications

Parameter Value Parameter Value
Product Status Active FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1825 pF @ 10 V FET Feature -
Power Dissipation (Max) 3.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The SI3493DDV-T1-GE3 is a power amplifier chip designed for use in RF applications. It operates at a frequency range of 1700MHz to 2200MHz, making it suitable for wireless communication systems. The chip features high efficiency and linearity, making it ideal for applications requiring high RF performance.
  • Equivalent

    Some equivalent products of SI3493DDV-T1-GE3 chip are Vishay Siliconix Si3493DV-T1-GE3, ON Semiconductor NDS3493A, and Diodes Inc. DMT3023LSS-13. They are all power MOSFETs with similar specifications and features.
  • Features

    - P-channel MOSFET transistor with low on-resistance - Low gate threshold voltage for easy control - Small form factor with DFN package - RoHS compliant for environmental friendliness - Gate-source voltage of +/-8V for flexibility in operation
  • Pinout

    The SI3493DDV-T1-GE3 has a pin count of 8 and functions as a dual N-channel TrenchFET power MOSFET. It is commonly used in power management applications to regulate and control power flow in electronic devices.
  • Manufacturer

    The manufacturer of SI3493DDV-T1-GE3 is Vishay Siliconix. Vishay Siliconix is a leading company in the design and production of a wide range of discrete semiconductors and passive electronic components for industrial, automotive, consumer, and telecommunications markets. They are known for their high-quality and innovative solutions in the semiconductor industry.
  • Application Field

    SI3493DDV-T1-GE3 is a P-channel enhancement mode MOSFET transistor designed for use in power management applications such as load switching and battery protection circuits. It can also be used in voltage regulation and DC-DC converter circuits. Its high efficiency and low on-resistance make it suitable for various portable and battery-powered devices.
  • Package

    The SI3493DDV-T1-GE3 chip is available in a DFN-6 package type, with a form of tape and reel. It has a size of 2mm x 2mm x 0.55mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • AO4292E

    AO4292E

    Alpha & Omega Semiconductor Inc.

    High-quality 100V 8A SOIC-8 MOSFET with 23mΩ resi...

  • VQ1004P

    VQ1004P

    Vishay

    VQ1004P by Siliconix

  • STS4DPF30L

    STS4DPF30L

    Stmicroelectronics

    Dual P-channel MOSFET Transistor STS4DPF30L featur...

  • STS9D8NH3LL

    STS9D8NH3LL

    STMicroelectronics

    Dual N-channel 30V MOSFET, with 0.012 Ohm resistan...

  • RFP30P05

    RFP30P05

    Onsemi

    MOSFET Power P-Channel TO-220AB

  • NE3210S01-T1B

    NE3210S01-T1B

    Cel

    High-Frequency NE3210S01-T1B Transistor: Incorpora...