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$5000vishay SI4816BDY-T1-GE3
30V N-type MOSFET with a continuous drain current of 5.8A and a pulsed drain current of 8.2A, housed in an 8-pin SOIC package on Tape and Reel (T/R)
Brands: Vishay
Mfr.Part #: SI4816BDY-T1-GE3
Datasheet: SI4816BDY-T1-GE3 Datasheet (PDF)
Package/Case: SOIC-8
Product Type: FET, MOSFET Arrays
RoHS Status:
Stock Condition: 7,286 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI4816BDY-T1-GE3 General Description
Mosfet Array 30V 5.8A, 8.2A 1W, 1.25W Surface Mount 8-SOIC
Features
- Halogen-free
- LITTLE FOOT® Plus power MOSFET
- 100% Rg tested
Application
- Industrial
- Power Management
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOIC-8 |
| Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 6.8 A, 11.4 A |
| Rds On - Drain-Source Resistance | 11.5 mOhms, 18.5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 7.8 nC, 11.6 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.4 W, 2.4 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI4 |
| Brand | Vishay Semiconductors | Configuration | Dual |
| Fall Time | 9 ns, 11 ns | Forward Transconductance - Min | 30 S, 31 S |
| Height | 1.75 mm | Length | 4.9 mm |
| Product Type | MOSFET | Rise Time | 9 ns, 9 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 24 ns, 31 ns |
| Typical Turn-On Delay Time | 11 ns, 13 ns | Width | 3.9 mm |
| Part # Aliases | SI4816DY-T1-E3-S |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI4816BDY-T1-GE3 is a p-channel enhancement mode power MOSFET chip designed for use in power management and DC-DC converter applications. It features low on-resistance, high efficiency, and reliable performance. The chip is suitable for a wide range of electronic devices requiring power switching and voltage regulation.
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Equivalent
Equivalent products of SI4816BDY-T1-GE3 chip include IRF7468PBF, IRF7468TRPBF, IPB47N10NF3, IPB47N10N3G, IPD47N10S3-2, and IPD47N10S3-2. These are power MOSFETs with similar specifications such as voltage ratings, current ratings, and package type. They can be used as replacements for SI4816BDY-T1-GE3 in various applications. -
Features
SI4816BDY-T1-GE3 is a P-channel MOSFET with a 30V drain-source voltage and 5.9A current rating. It features low on-resistance and a small form factor, making it suitable for power management applications in portable devices. It is RoHS-compliant and can handle high-frequency operation. -
Pinout
The SI4816BDY-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. Pin functions include gate (G), drain (D), and source (S) for each channel. It is commonly used for power management applications in various electronic devices. -
Manufacturer
The manufacturer of the SI4816BDY-T1-GE3 is Vishay Intertechnology, Inc. Vishay Intertechnology is a global company specializing in the design, manufacture, and distribution of a wide range of electronic components. They are known for producing high-quality semiconductors, passive components, and sensors for various industries including automotive, telecommunications, consumer electronics, and industrial applications. -
Application Field
SI4816BDY-T1-GE3 is a dual N-channel MOSFET suitable for use in various applications such as power management, load switching, battery protection, and LED lighting. It is commonly used in consumer electronics, automotive systems, industrial equipment, and power supplies where high efficiency and reliability are required. -
Package
The SI4816BDY-T1-GE3 chip is a PowerPAK SO-8 package with a dual N-channel MOSFET form. The package size is 5mm x 6mm x 1mm.
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