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SI7288DP-T1-GE3
Transistor with Dual N-Channel configuration, 40V Source Voltage, and capable of handling 20A Continuous Drain Current
Brands: Vishay
Mfr.Part #: SI7288DP-T1-GE3
Datasheet: SI7288DP-T1-GE3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
RoHS Status:
Stock Condition: 5,039 pcs, New Original
Product Type: FET, MOSFET Arrays
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.891 | $0.891 |
| 10 | $0.814 | $8.140 |
| 30 | $0.771 | $23.130 |
| 100 | $0.721 | $72.100 |
| 500 | $0.582 | $291.000 |
| 1000 | $0.573 | $573.000 |
In Stock: 5,039 PCS
SI7288DP-T1-GE3 General Description
The SI7288DP-T1-GE3 MOSFET transistor provides design engineers with a versatile and dependable solution for their circuitry needs. Its exceptional performance characteristics, combined with the convenience of Tape & Reel packaging, make it a valuable component for various electronic devices and equipment. With its PowerPAK® SO-8 Dual package type and N-Channel configuration, this transistor offers flexibility and efficiency in power management applications. Trust the SI7288DP-T1-GE3 to deliver consistent and reliable performance in your next design project
Features
- Pulse-width modulation enabled
- Soft-start circuitry integrated
- Thermal shutdown protection
Application
Backlight Inverter for LCD Displays |DC/DC Converter D1 D2Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
| Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 19 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 15 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 15.6 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI7 |
| Brand | Vishay Semiconductors | Configuration | Dual |
| Fall Time | 8 ns | Forward Transconductance - Min | 39 S |
| Product Type | MOSFET | Rise Time | 8 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 7 ns | Part # Aliases | SI7288DP-GE3 |
| Unit Weight | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7288DP-T1-GE3 is a dual P-channel MOSFET chip designed for highside load switching in a variety of power management applications. It features a low on-resistance, high current capability, and low gate threshold voltage, making it ideal for efficient power control in portable devices, telecom equipment, and other industrial applications.
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Equivalent
Some equivalent products of SI7288DP-T1-GE3 chip are D70333GJ-10, AON7430, and IRFD9110. These chips have similar specifications and can be used as substitutes for the SI7288DP-T1-GE3 in various electronic applications. -
Features
SI7288DP-T1-GE3 is a dual N-channel MOSFET power switch with a low ON-resistance and high current carrying capability (7.6A). It has an integrated Schottky diode for reverse battery protection and a built-in gate driver for ease of use. The device also features thermal shutdown and overcurrent protection for added reliability. -
Pinout
SI7288DP-T1-GE3 is a dual P-channel MOSFET with a pin count of 8. It is typically used for power management in portable devices due to its low on-resistance and low voltage drop. The device functions as a power switch, enabling efficient battery charging and power distribution in a compact package. -
Manufacturer
The manufacturer of SI7288DP-T1-GE3 is Vishay, a multinational company specializing in the design and manufacturing of electronic components. Vishay produces a wide range of products, including discrete semiconductors, optoelectronics, resistors, capacitors, and sensors, catering to various industries such as automotive, industrial, consumer electronics, and telecommunications. -
Application Field
SI7288DP-T1-GE3 is commonly used in applications such as LED drivers, power supplies, and voltage regulators. It can also be utilized in industrial automation, automotive electronics, and consumer electronics due to its high efficiency and low on-resistance characteristics. -
Package
The SI7288DP-T1-GE3 chip is a dual P-channel MOSFET in a PowerPAK SO-8 package. It is in a surface-mount form with a size of 5 mm x 6 mm.
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