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SI7456DP-T1-E3
MOSFET capable of handling 9.3A current and 5.2W power at 100V
Brands: Vishay
Mfr.Part #: SI7456DP-T1-E3
Datasheet: SI7456DP-T1-E3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
RoHS Status:
Stock Condition: 8,159 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.093 | $1.093 |
| 10 | $0.986 | $9.860 |
| 30 | $0.927 | $27.810 |
| 100 | $0.862 | $86.200 |
| 500 | $0.833 | $416.500 |
| 1000 | $0.819 | $819.000 |
In Stock: 8,159 PCS
SI7456DP-T1-E3 General Description
The package includes important specifications like power dissipation, termination type, and voltage ratings. With a typical voltage Vds of 100V and a voltage Vgs Rds measurement of 10V, this MOSFET can handle high-power applications with ease. The SMD termination type ensures reliable connectivity in surface mount PCB designs
Features
Application
Primary Side Switch for High Density DC/DC |Telecom/Server 48 V, Full-/Half-Bridge DC/DC |Industrial and 42 V Automotive DSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 9.3 A | Rds On - Drain-Source Resistance | 25 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 36 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 5.2 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI7 | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 26 ns |
| Forward Transconductance - Min | 35 S | Height | 1.04 mm |
| Length | 6.15 mm | Product Type | MOSFET |
| Rise Time | 10 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 46 ns | Typical Turn-On Delay Time | 20 ns |
| Width | 5.15 mm | Part # Aliases | SI7456DP-E3 |
| Unit Weight | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7456DP-T1-E3 is a power MOSFET component that is part of the Vishay Siliconix family. It is designed for use in switching applications in various electronic devices. This chip offers low on-resistance, high-speed switching capabilities, and is suitable for a wide range of voltage and current requirements.
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Equivalent
The equivalent products of the SI7456DP-T1-E3 chip are SI7456DP-T1-GE3 and SI7456DP-T1-RE3. These chips have similar specifications and functionality, making them suitable replacements for the SI7456DP-T1-E3 in various applications. -
Features
1. Low RDS(on) of 0.75 ohms 2. Low gate charge for improved efficiency 3. High peak current capability 4. Designed for automotive applications 5. RoHS compliant 6. Halogen-free 7. Low profile DPAK package (Note: This information is subject to change and may not be up to date.) -
Pinout
The SI7456DP-T1-E3 is a dual P-channel MOSFET with a pin count of 8. Pin functions include gate1, source1, drain1, gate2, source2, and drain2. It is commonly used in power management applications. -
Manufacturer
The SI7456DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is an American company that produces discrete semiconductors and passive electronic components. They specialize in components for a wide range of industries, including automotive, industrial, consumer electronics, and telecommunications. -
Application Field
The SI7456DP-T1-E3 is commonly used in high-speed communication protocols, such as Ethernet, SONET, and Fibre Channel. It is also suitable for applications in industrial automation, automotive electronics, and consumer electronics due to its low capacitance and high bandwidth capabilities for ESD protection. -
Package
The SI7456DP-T1-E3 chip comes in a DFN (Dual Flat No-Lead) package type, with a dual MOSFET form factor. The size of the chip is 3mm x 3mm in dimension.
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