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$5000vishay SIA436DJ-T1-GE3
N-Channel 8 V (D-S) MOSFET
Brands: Vishay
Mfr.Part #: SIA436DJ-T1-GE3
Datasheet: SIA436DJ-T1-GE3 Datasheet (PDF)
Package/Case: SC-70-6
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA436DJ-T1-GE3 General Description
N-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Features
- Suitable for high-frequency applications
- Robust construction ensures reliability
- Compliant with major industry standards
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SC-70-6 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 8 V | Id - Continuous Drain Current: | 12 A |
| Rds On - Drain-Source Resistance: | 9.4 mOhms | Vgs - Gate-Source Voltage: | - 5 V, + 5 V |
| Vgs th - Gate-Source Threshold Voltage: | 350 mV | Qg - Gate Charge: | 15 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 19 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET, PowerPAK | Series: | SIA |
| Packaging: | MouseReel | Brand: | Vishay Semiconductors |
| Configuration: | Single | Fall Time: | 8 ns |
| Forward Transconductance - Min: | 70 S | Product Type: | MOSFET |
| Rise Time: | 10 ns | Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 30 ns | Typical Turn-On Delay Time: | 11 ns |
| Part # Aliases: | SIA436DJ-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIA436DJ-T1-GE3 is a high-speed diode array designed to protect sensitive electronic equipment from voltage transients. It features ultra-low capacitance and low clamping voltage, making it ideal for use in high-speed communication systems. The chip is commonly used in Ethernet ports, USB interfaces, and other high-speed data lines to provide robust transient protection.
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Equivalent
The equivalent products of SIA436DJ-T1-GE3 chip are SIA431DJ-T1-GE3 and SIA434DJ-T1-GE3, in the SIA4xxDJ family of chips. These products provide similar functionality and features as the SIA436DJ-T1-GE3 chip, offering a range of options for designers looking for alternatives. -
Features
- SIA436DJ-T1-GE3 is a dual N-channel MOSFET - It has a low on-resistance of 13.5 mΩ - It is capable of handling high current loads - Suitable for various applications such as power management and power supplies - Features a compact and efficient design for space-constrained applications -
Pinout
SIA436DJ-T1-GE3 is a dual N-channel MOSFET with a total pin count of 6. Pin functions include gate (G), drain (D), and source (S) for each N-channel MOSFET. It is commonly used in power management applications. -
Manufacturer
SIA436DJ-T1-GE3 is manufactured by Vishay Intertechnology, a global manufacturer of discrete semiconductors and passive electronic components. Vishay Intertechnology specializes in supplying components for a wide range of industries, including automotive, consumer electronics, industrial, and telecommunications. They are known for their high-quality products and innovative solutions in the electronics industry. -
Application Field
SIA436DJ-T1-GE3 is commonly used in high-speed data communication systems such as optical transceivers, active optical cables, and Ethernet switches. It can also be found in network interface cards, routers, and other networking equipment requiring high-performance data transmission capabilities. -
Package
The SIA436DJ-T1-GE3 is a surface mount diode with a form factor of DO-214AC (SMA) and a size of 2.8mm x 2.8mm x 1.5mm.
We provide high quality products, thoughtful service and after sale guarantee
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