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vishay SIA445EDJ-T1-GE3

MOSFET -20V [email protected] 12A P-Ch G-III

ISO14001 ISO9001 DUNS

Brands: Vishay

Mfr.Part #: SIA445EDJ-T1-GE3

Datasheet: SIA445EDJ-T1-GE3 Datasheet (PDF)

Package/Case: SC-70-6

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for SIA445EDJ-T1-GE3 or email to us: Email: [email protected], we will contact you within 12 hours.

SIA445EDJ-T1-GE3 General Description

Offering superior performance and reliability, the SIA445EDJ-T1-GE3 MOSFET P-CH transistor is ideal for demanding applications where high current and low resistance are required. With a maximum operating temperature of 150°C and a minimum of -55°C, this transistor can withstand extreme temperature conditions without compromising its functionality. The PowerPAK SC70 case style offers efficient heat dissipation, while the 6-pin configuration allows for easy integration into circuit designs. The MSL 1 - Unlimited rating ensures that this transistor is suitable for a wide range of storage and assembly environments

Features

  • High speed switching and low loss
  • Multibit and high frequency operation
  • Robust design for high reliability
  • Economical solution with high performance

Application

Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Charger Switch - Load Switch

Specifications

Parameter Value Parameter Value
Manufacturer: Vishay Product Category: MOSFET
RoHS: Details Technology: Si
Mounting Style: SMD/SMT Package / Case: SC-70-6
Transistor Polarity: P-Channel Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 16.5 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V Qg - Gate Charge: 48 nC
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 19 W Channel Mode: Enhancement
Tradename: TrenchFET, PowerPAK Series: SIA
Packaging: MouseReel Brand: Vishay Semiconductors
Configuration: Single Fall Time: 20 ns
Forward Transconductance - Min: 29 S Product Type: MOSFET
Rise Time: 25 ns Factory Pack Quantity: 3000
Subcategory: MOSFETs Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 25 ns Part # Aliases: SIA445EDJ-GE3
Unit Weight: 0.001446 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The SIA445EDJ-T1-GE3 is a power MOSFET chip designed for high efficiency, low on-resistance, and fast switching speeds in a compact package. It is suitable for use in a wide range of power management applications, such as voltage regulators, DC-DC converters, and motor control circuits. With its advanced design and performance capabilities, this chip is ideal for maximizing power efficiency and minimizing heat dissipation in electronic devices.
  • Equivalent

    The equivalent products of SIA445EDJ-T1-GE3 chip are SIA445EDJ-T1-GE4 and SIA445EDJ-T2-GE3. These chips have similar functionalities and specifications, making them suitable replacements for each other in various electronic applications.
  • Features

    SIA445EDJ-T1-GE3 is a MOSFET with a maximum drain-source voltage of 30V, a continuous drain current of 10A, and a low on-resistance of 8mΩ. It also features a small footprint and high power density, making it suitable for high-performance applications in power management and motor control.
  • Pinout

    SIA445EDJ-T1-GE3 has 6 pins and is a 12 V, 5 A low-voltage load switch IC. It is designed to protect power supply systems by providing a controlled turn-on and turn-off of devices to prevent damage and improve efficiency.
  • Manufacturer

    SIA445EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc., an American manufacturer of discrete semiconductors and passive electronic components. Vishay is a global company that provides components for a wide range of industries, including automotive, industrial, consumer, and telecommunications.
  • Application Field

    Some application areas for SIA445EDJ-T1-GE3 may include data centers, telecommunications equipment, industrial systems, and consumer electronics. This high-performance power MOSFET is suitable for a variety of power management applications where high reliability and efficiency are required.
  • Package

    The SIA445EDJ-T1-GE3 chip comes in a surface-mount package type, it is in a form of a dual MOSFET, and measures 2mm x 2mm in size.

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  • quantity

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