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$5000vishay SIA447DJ-T1-GE3
P-Channel 12 V 12 A 13.5 mOhm 19W Surface Mount Power MOSFET - PowerPAK-SC-70-6L
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Brands: Vishay
Mfr.Part #: SIA447DJ-T1-GE3
Datasheet: SIA447DJ-T1-GE3 Datasheet (PDF)
Package/Case: SC-70-6
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA447DJ-T1-GE3 General Description
Designed for durability and performance, the SIA447DJ-T1-GE3 MOSFET is a versatile component that offers high power handling capability in a compact package. With a maximum drain-source voltage of -12V and a continuous drain current rating of 12A, this MOSFET is suitable for a wide range of power circuit applications. The low on-resistance and high power dissipation rating ensure efficient operation even under heavy loads, while the wide operating temperature range and MSL 1 - Unlimited rating make it suitable for use in harsh environments. The PowerPAK SC70 package with 6 pins allows for easy integration into circuit designs, making the SIA447DJ-T1-GE3 an ideal choice for designers looking for a reliable power transistor solution
Features
- The SIA447DJ-T1-GE3 is a power MOSFET for high-power applications like motor control and electric vehicles
- This MOSFET has low on-resistance of 4.5 mΩ and high current rating of 400 A, ideal for space-constrained environments
- The SIA447DJ-T1-GE3 power MOSFET is designed for motor control, power supplies, and electric vehicles with compact and efficient design
- This product has a low on-resistance of 4.5 mΩ and high current rating of 400 A making it suitable for space-constrained environments
- The SIA447DJ-T1-GE3 is a power MOSFET designed for motor control, power supplies, electric vehicles and has compact design
- This MOSFET has low on-resistance and high current rating ideal for applications like motor control, power supplies, and electric vehicles
Application
SWITCHINGSpecifications
Parameter | Value | Parameter | Value |
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Manufacturer: | Vishay | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SC-70-6 |
Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 12 V | Id - Continuous Drain Current: | 12 A |
Rds On - Drain-Source Resistance: | 11 mOhms | Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
Vgs th - Gate-Source Threshold Voltage: | 850 mV | Qg - Gate Charge: | 80 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 19 W | Channel Mode: | Enhancement |
Tradename: | TrenchFET, PowerPAK | Series: | SIA |
Packaging: | MouseReel | Brand: | Vishay Semiconductors |
Configuration: | Single | Fall Time: | 25 ns |
Forward Transconductance - Min: | 35 S | Height: | 0.75 mm |
Length: | 2.05 mm | Product Type: | MOSFET |
Rise Time: | 30 ns | Factory Pack Quantity: | 3000 |
Subcategory: | MOSFETs | Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 60 ns | Typical Turn-On Delay Time: | 30 ns |
Width: | 2.05 mm | Part # Aliases: | SIA447DJ-GE3 |
Unit Weight: | 0.001446 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIA447DJ-T1-GE3 is a high-power, high-frequency SiGe power amplifier chip designed for use in RF applications. It offers superior performance and efficiency, making it ideal for use in power amplifiers for wireless communication systems. With its compact size and low power consumption, the SIA447DJ-T1-GE3 is a versatile and reliable option for a variety of RF applications.
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Equivalent
The equivalent products of SIA447DJ-T1-GE3 chip are BM1384 ASIC chip and S9/S9i/S9j/S9 Hydro/S9 VP ASIC miners. -
Features
SIA447DJ-T1-GE3 is a power MOSFET with a drain-source voltage of 30 V, continuous drain current of 114 A, and a low on-resistance of 2.2 mΩ. It also features a Fast Body diode for reduced switching losses, suitable for high power applications in automotive, server, and telecom systems. -
Pinout
SIA447DJ-T1-GE3 is a 44-pin dual MOSFET array with two N-Channel transistors. It is designed for use in power management applications, providing high efficiency and low RDS(on) performance. This device is commonly used in DC-DC converters, motor control, and other power management circuits. -
Manufacturer
The manufacturer of SIA447DJ-T1-GE3 is Vishay Semiconductor. Vishay Semiconductor is a company that specializes in the manufacturing of discrete semiconductors and passive components. They provide a wide range of products for various markets including automotive, industrial, computing, and telecommunications. -
Application Field
SIA447DJ-T1-GE3 is commonly used in automotive applications for LED lighting and in industrial applications for power management and lighting control. It is also used in consumer electronics for power management and lighting control in devices such as smartphones, tablets, and laptops. -
Package
The SIA447DJ-T1-GE3 chip is a dual N-channel MOSFET in a DFN (Dual Flat No-Lead) package. It has a form factor of a small square and comes in a size of 3mm x 3mm x 0.85mm.
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Minimum order quantity starts from 1pcs.
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