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$5000vishay SIA461DJ-T1-GE3
20 Volt Negative-Channel MOSFET
Brands: Vishay
Mfr.Part #: SIA461DJ-T1-GE3
Datasheet: SIA461DJ-T1-GE3 Datasheet (PDF)
Package/Case: SC-70-6
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA461DJ-T1-GE3 General Description
The SIA461DJ-T1-GE3 MOSFET is a powerful P-channel transistor that provides a continuous drain current of 12A and a drain-source voltage of -20V. With an incredibly low on-resistance of 0.025ohm and a power dissipation of 17.9W, this transistor is perfect for high-performance applications where efficiency is key. The PowerPAK SC70 case style and 6 pins make it easy to integrate into various electronic designs, while the wide operating temperature range of -55°C to +150°C ensures reliable performance in extreme conditions. The MSL 1 - Unlimited classification further guarantees that this transistor is suitable for a wide range of manufacturing environments
Features
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SC-70-6 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 33 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 17.9 W |
| Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
| Series | SIA | Brand | Vishay Semiconductors |
| Configuration | Single | Fall Time | 20 ns |
| Forward Transconductance - Min | 20 S | Product Type | MOSFET |
| Rise Time | 22 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 50 ns | Typical Turn-On Delay Time | 20 ns |
| Part # Aliases | SIA461DJ-GE3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIA461DJ-T1-GE3 is a high-performance, low capacitance TVS diode array designed to protect sensitive electronics from voltage transients. It offers superior surge protection for Ethernet and data line applications, with a maximum operating voltage of 5V and a peak pulse power of 1000W. This chip is ideal for use in applications where ESD and lightning protection are required.
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Equivalent
The equivalent products of SIA461DJ-T1-GE3 chip include SIA460DJ-T1-GE3, SIA462DJ-T1-GE3, and SIA463DJ-T1-GE3. These chips are all power management integrated circuits that offer similar functionality and performance characteristics. -
Features
SIA461DJ-T1-GE3 is a high-performance RF power amplifier module designed for use in LTE small cell base stations. It operates in the frequency range of 2.3-2.7 GHz with a linear output power of 45 dBm. It features high efficiency, adjustable output power, and excellent linearity for improved signal quality. -
Pinout
SIA461DJ-T1-GE3 is a small-signal N-channel MOSFET with a pin count of 3. The pins are Gate (G), Drain (D), and Source (S). It is typically used for switching applications in low voltage circuits. -
Manufacturer
SIA461DJ-T1-GE3 is manufactured by Vishay. Vishay is an American company that specializes in manufacturing discrete semiconductors, passive components, and integrated circuit. They are known for producing a wide range of electronic components for various industries, including automotive, telecommunications, and consumer electronics. -
Application Field
SIA461DJ-T1-GE3 is a high power, high frequency RF power amplifier suitable for various applications including cellular infrastructure, small cell, repeaters, and distributed antenna systems. It can also be used in microwave radios, point-to-point, and point-to-multipoint communication systems. -
Package
The SIA461DJ-T1-GE3 chip is a DFN package type with a form factor of Dual Flat No-leads (DFN) and a size of 3.3mm x 3.3mm.
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