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Orders Over
$5000vishay SIA906EDJ-T1-GE3
MOSFET 20V Vds 12V Vgs PowerPAK SC-70
Brands: Vishay
Mfr.Part #: SIA906EDJ-T1-GE3
Datasheet: SIA906EDJ-T1-GE3 Datasheet (PDF)
Package/Case: SC-70-6
Product Type: FET, MOSFET Arrays
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SIA906EDJ-T1-GE3 General Description
The SIA906EDJ-T1-GE3 MOSFET transistor is a premium component with dual N-channel polarity, providing a continuous drain current (Id) of 4.5A and a drain source voltage (Vds) of 20V. Its low on resistance (Rds(on)) of 0.037ohm and test voltage (Vgs) of 4.5V contribute to its efficient power handling capabilities, while the threshold voltage ensures precise and dependable switching performance
Features
- High-frequency performance
- Silicon-controlled rectifier (SCR) functionality
- Low-input capacitance
Application
SWITCHINGSpecifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SC-70-6 |
| Transistor Polarity: | N-Channel | Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V | Id - Continuous Drain Current: | 4.5 A |
| Rds On - Drain-Source Resistance: | 46 mOhms | Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV | Qg - Gate Charge: | 950 pC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 7.8 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET, PowerPAK | Series: | SIA |
| Packaging: | MouseReel | Brand: | Vishay Semiconductors |
| Configuration: | Dual | Fall Time: | 12 ns |
| Forward Transconductance - Min: | 14 S | Height: | 0.75 mm |
| Length: | 2.05 mm | Product Type: | MOSFET |
| Rise Time: | 18 ns | Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs | Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns | Typical Turn-On Delay Time: | 10 ns |
| Width: | 2.05 mm | Part # Aliases: | SIA906EDJ-GE3 |
| Unit Weight: | 0.000988 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SIA906EDJ-T1-GE3 is a power switch and protection IC designed for use in high-performance computing applications. It features a low resistance MOSFET for efficient power delivery and comprehensive protection features to safeguard against overcurrent, overvoltage, and overtemperature conditions. This chip is ideal for use in servers, workstations, and other high-power computing systems.
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Equivalent
The equivalent products of SIA906EDJ-T1-GE3 chip are IRF6727MTRPBF, AON6618, and SI4410DY-T1-GE3. These chips are also dual N-channel MOSFETs with similar specifications and features. -
Features
- SIA906EDJ-T1-GE3 is a 90V N-channel MOSFET - It has a maximum drain-source voltage of 90V - Low on-resistance of 25mΩ - High current handling capability of 34A - Suitable for power management applications in automotive, industrial, and consumer electronics. -
Pinout
SIA906EDJ-T1-GE3 is a 6-pin power transistor with a NPN bipolar junction. It is commonly used for power switching applications due to its low saturation voltage and high current capability. The part is manufactured by Vishay and has a maximum collector current of 1A. -
Manufacturer
SIA906EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is an American company that specializes in the design and manufacture of electronic components such as passive components, discrete semiconductors, and sensors. They provide products for a wide range of industries including automotive, telecommunications, and consumer electronics. -
Application Field
The SIA906EDJ-T1-GE3 is commonly used in power management applications, such as voltage regulators, DC-DC converters, and battery charging circuits. It is also suitable for use in industrial, automotive, and consumer electronics applications that require high efficiency and compact size. -
Package
The SIA906EDJ-T1-GE3 chip is a discrete semiconductor package type. It is a surface mount form factor with a size of 3.9mm x 2.5mm (SOD-123FL package).
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