TN0104N8-G

TN0104N8-G General Description

Designed for superior power handling capabilities and high input impedance, the TN0104N8-G transistor is a top-of-the-line component for a wide range of electronic applications. Its vertical DMOS structure and silicon-gate manufacturing process ensure reliable performance and efficient operation. With a low threshold voltage, high breakdown voltage, and fast switching speeds, this transistor is ideal for applications where stability and precision are paramount. Whether you're looking for a transistor with low input capacitance or resistance to thermal runaway, the TN0104N8-G delivers exceptional results. Trust this advanced transistor to meet your needs and exceed your expectations

Features

• Superior radiation tolerance
• High-frequency stability
• Limited dynamic current stress
• Low input and output capacitance
• Fast thermal transient response
• Ruggedness against physical shock

Specifications

Parameter	Value	Parameter	Value
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	630mA (Tj)	Drive Voltage (Max Rds On, Min Rds On)	3V, 10V
Rds On (Max) @ Id, Vgs	2Ohm @ 1A, 10V	Vgs(th) (Max) @ Id	1.6V @ 500µA
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	70 pF @ 20 V
Power Dissipation (Max)	1.6W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA