TN2504N8-G

TN2504N8-G General Description

Engineers and designers will appreciate the versatility of the TN2504N8-G, which offers a combination of power handling capabilities and high input impedance not typically found in other transistor options. Its vertical DMOS structure provides a solid foundation for efficient switching and amplification, while the silicon-gate manufacturing process ensures consistent performance and reliability. Whether tasked with driving motors, controlling power supplies, or amplifying signals, this transistor is a reliable and efficient choice for a wide range of applications

Features

• Low noise emissions
• High reliability performance
• Compact package size

Specifications

Parameter	Value	Parameter	Value
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	890mA (Tj)	Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	1Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id	1.6V @ 1mA
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 20 V
Power Dissipation (Max)	1.6W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA