TP5335K1-G

TP5335K1-G General Description

The TP5335K1-G is a cutting-edge low threshold enhancement-mode transistor that boasts superior power handling capabilities thanks to its advanced vertical DMOS structure and silicon-gate manufacturing process. This innovative combination ensures the device offers the best of both worlds - the high power capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient typically seen in MOS devices. With a design that eliminates thermal runaway and thermally-induced secondary breakdown, users can rest assured of its reliability and durability

Features

• Wide operating frequency range and stability
• Inherently linear and distortion-free
• Ease of design in with other components
• Fast switching speeds and high current handling
• Excellent thermal conductivity and dissipation
• Low radiation sensitivity and immunity

Specifications

Parameter	Value	Parameter	Value
Product Status	Active	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	350 V
Current - Continuous Drain (Id) @ 25°C	85mA (Tj)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30Ohm @ 200mA, 10V	Vgs(th) (Max) @ Id	2.4V @ 1mA
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	110 pF @ 25 V
Power Dissipation (Max)	360mW (Ta)	Operating Temperature	-55°C ~ 150°C
Mounting Type	Surface Mount	Supplier Device Package	TO-236AB (SOT23)
Package / Case	TO-236-3, SC-59, SOT-23-3