LBSS123LT1G

Part points

• The LBSS123LT1G chip is a low barrier Schottky diode designed for high frequency applications. It offers low forward voltage drop and fast switching performance, making it suitable for use in RF detectors, mixers, and high-speed switching circuits. This chip is compact and reliable, ensuring optimal performance in a range of electronic devices.

• Equivalent

  The equivalent products of LBSS123LT1G chip are MMBD1201LT1G, MMBZ1205LT1G, MMBZ1207LT1G, MMBD7000LT1G, and MMBZ1230BLT1G.

• Features

  LBSS123LT1G is a surface mount Schottky diode with a low forward voltage drop of 0.37V at 1A and a maximum reverse voltage of 30V. It has a forward current of 1A, a low leakage current of 10nA, and a fast switching speed of 6ns.

• Pinout

  The LBSS123LT1G is a single P-channel MOSFET with a pin count of 3. The pins include the drain (D), gate (G), and source (S). The drain is the output terminal, the gate controls the flow of current, and the source is the input terminal.

• Manufacturer

  The LBSS123LT1G is manufactured by ON Semiconductor. It is a multinational semiconductor company that specializes in designing and producing power management, analog, and discrete devices. ON Semiconductor caters to various industries including automotive, industrial, consumer electronics, and communications.

• Application Field

  The LBSS123LT1G is a Schottky Barrier Diode primarily used in switching applications, voltage clamping, and protection circuits. It is commonly found in power supplies, motor control circuits, and high-frequency rectifiers.

• Package

  The LBSS123LT1G chip is in a SOD-523 package type, with a form factor of surface mount. The chip measures approximately 1.0mm x 0.6mm x 0.4mm in size.