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$5000
NXP MJE13009
12 A, 400 V NPN Bipolar Power Transistor
Brands: Onsemi
Mfr.Part #: MJE13009
Datasheet: MJE13009 Datasheet (PDF)
Package/Case: TO-220-3
RoHS Status:
Stock Condition: 3,630 pcs, New Original
Product Type: Single Bipolar Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.453 | $0.453 |
| 10 | $0.411 | $4.110 |
| 30 | $0.390 | $11.700 |
| 100 | $0.292 | $29.200 |
| 500 | $0.279 | $139.500 |
| 1000 | $0.273 | $273.000 |
In Stock: 3,630 PCS
MJE13009 General Description
MJE13009 is a type of NPN bipolar power transistor that is commonly used in high-voltage switching applications.
Features
- Collector-emitter voltage of 600V
- Collector current of 12A
- Power dissipation of 150W
- High switching speed
- Low saturation voltage
Application
- Switch mode power supplies
- High-voltage electronic ballasts for fluorescent lamps
- Motor control circuits
- AC-DC converters
- Voltage regulators
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Name | MJE13009 | Product Type | NPN Silicon Power Transistor |
| Collector-Emitter Voltage (Vce) | 700V | Collector Current (Ic) | 12A |
| Base Current (Ib) | 2A | Power Dissipation (Pd) | 80W |
| Transition Frequency (ft) | 4 MHz | Operating Temperature Range | -65°C to 150°C |
| Package | TO-220 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the MJE13009 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : NTE2667
Brands :
Package :
Description :
Part Number : TIP35C
Brands :
Package : TO-247
Description : Trans GP BJT NPN 100V 25A 125000mW 3-Pin(3+Tab) TO-247 Tube
Part Number : MJW16010
Brands :
Package :
Description :
Part Number : MJH16010
Brands :
Package :
Description :
Part Number : BDW93C
Brands :
Package : TO-220
Description : BDW93/A/B/CSilicon NPN Power Transistors
Part Number : BDW94C
Brands :
Package : TO-220
Description : Trans Darlington PNP 100V 12A 80000mW 3Pin(3+Tab) TO-220AB Bulk
Part points
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The MJE13009 is a high voltage NPN power transistor that is widely used in various electronic applications. It can handle high power dissipation and voltage levels up to 400V, making it suitable for use in power supplies, inverter circuits, motor control, and audio amplifiers. The transistor is designed to deliver high performance and efficiency while ensuring reliable operation in demanding conditions.
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Equivalent
Some equivalent products of the MJE13009 chip include the STMicroelectronics ST13009, ON Semiconductor TIP3055, Fairchild Semiconductor KSE13009, and NXP Semiconductors MJE13009G. -
Features
The MJE13009 is an NPN silicon power transistor with a maximum collector-emitter voltage of 400V, a continuous collector current of 12A, and a power dissipation of 80W. It is primarily used in high-speed, high-power switching applications and offers excellent switching times, low saturation voltage, and a built-in base-emitter shunt to improve switching characteristics. -
Pinout
The MJE13009 is a transistor with a TO-220 package. It has three pins - the collector (C), base (B), and emitter (E). The collector is connected to the positive power supply, the emitter is connected to ground, and the base is used to control the flow of current between the collector and emitter. -
Manufacturer
The manufacturer of the MJE13009 is ON Semiconductor. ON Semiconductor is a global semiconductor supplier specializing in power management and precision applications. -
Application Field
The MJE13009 is a high-voltage, high-speed NPN transistor commonly used in power supply circuits, switch mode power supplies (SMPS), inverters, and high-frequency applications. It is specifically designed for applications requiring high collector-emitter voltage and current capabilities. -
Package
The MJE13009 chip is a power transistor available in a TO-220AB package. It features a through-hole form with a size of 10.67mm x 4.57mm.
Datasheet PDF
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