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NXP MRF281ZR1

RF Mosfet 26 V 25 mA 1.93GHz 12.5dB 4W NI-200Z

ISO14001 ISO9001 DUNS

Brands: NXP

Mfr.Part #: MRF281ZR1

Datasheet: MRF281ZR1 Datasheet (PDF)

Package/Case: NI-200Z-3

Product Type: RF FETs, MOSFETs

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for MRF281ZR1 or email to us: Email: [email protected], we will contact you within 12 hours.

MRF281ZR1 General Description

RF Mosfet 26 V 25 mA 1.93GHz 12.5dB 4W NI-200Z

Specifications

Parameter Value Parameter Value
Manufacturer: NXP Product Category: RF MOSFET Transistors
Transistor Polarity: N-Channel Technology: Si
Vds - Drain-Source Breakdown Voltage: 65 V Operating Frequency: 1 GHz to 2.5 GHz
Gain: 11 dB Output Power: 4 W
Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT Package / Case: NI-200Z-3
Packaging: Reel Brand: NXP Semiconductors
Channel Mode: Enhancement Configuration: Single
Height: 2.95 mm Length: 5.16 mm
Pd - Power Dissipation: 20 W Product Type: RF MOSFET Transistors
Subcategory: MOSFETs Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4 V
Width: 4.14 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MRF281ZR1 is a RF power amplifier chip developed by NXP Semiconductors. It operates in the frequency range of 2110 to 2170 MHz and is primarily used in wireless communications applications, such as cellular base stations. The chip provides high output power, high linearity, and efficient operation, making it suitable for 3G and 4G LTE networks.
  • Equivalent

    Some equivalent products to the MRF281ZR1 chip include the MRF281SR1, MRF282Z, and MRF282XR1. These chips are all RF power transistors designed for high-performance applications.
  • Features

    The MRF281ZR1 is a high power RF transistor developed by NXP Semiconductors. It is designed for use in mobile radio applications in the 136-174 MHz frequency range. The key features of this transistor include high power output, excellent linearity, and efficiency, making it suitable for demanding communication requirements.
  • Pinout

    The MRF281ZR1 is a single-ended RF power amplifier transistor with a pin count of 3. The pins are labeled Collector (C), Base (B), and Emitter (E). The collector is connected to the positive voltage supply, the base receives the input signal, and the emitter is grounded.
  • Manufacturer

    The manufacturer of the MRF281ZR1 is Motorola Solutions, Inc. It is an American company that specializes in communication technology and services.
  • Application Field

    The MRF281ZR1 is a high-frequency silicon bipolar RF power transistor designed for applications in the VHF frequency range. It is commonly used in TV broadcasting, VHF transmitters, and RF heating systems. Its high power and frequency capabilities make it suitable for use in various communication and industrial applications.
  • Package

    The MRF281ZR1 chip has a package type of SOT-223, a form of surface mount, and a size of around 6.7 mm x 6.7 mm.

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  • quantity

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