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$5000NXP MRF6V2300NBR1
VHV6 300W TO272WB4N RF MOSFET Transistors
Brands: Nxp Semiconductors
Mfr.Part #: MRF6V2300NBR1
Datasheet: MRF6V2300NBR1 Datasheet (PDF)
Package/Case: TO272-4
Product Type: RF FETs, MOSFETs
RoHS Status:
Stock Condition: 2,723 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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MRF6V2300NBR1 General Description
Designed to meet the demands of high-voltage and high-current conditions, this transistor is built to last in even the most challenging RF amplifier applications. Its robust construction and quality materials ensure durability and longevity, making it a cost-effective solution for your amplification needs
Features
- Frequency Range: 20,000 - 40,000 MHz
- Output Power: 600W - 1,200W
- Gain: 22 dB - 30 dB
Application
- Avionics
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | RF MOSFET Transistors | RoHS | Details |
| Transistor Polarity | N-Channel | Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 110 V | Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C | Mounting Style | SMD/SMT |
| Package / Case | TO-272-4 | Brand | NXP Semiconductors |
| Channel Mode | Enhancement | Configuration | Single Dual Drain Dual Gate |
| Height | 2.64 mm | Length | 23.67 mm |
| Moisture Sensitive | Yes | Product Type | RF MOSFET Transistors |
| Series | MRF6V2300N | Factory Pack Quantity | 500 |
| Subcategory | MOSFETs | Type | RF Power MOSFET |
| Vgs - Gate-Source Voltage | - 500 mV, 10 V | Width | 9.07 mm |
| Part # Aliases | 935309671528 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MRF6V2300NBR1 is a high power RF amplifier chip designed for use in various applications such as industrial, scientific, and medical (ISM) bands. It operates in the frequency range of 2300-2700 MHz and offers high efficiency and gain for power amplification needs. This chip is commonly used in wireless communication systems, radar systems, and satellite communications.
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Equivalent
Some equivalent products of MRF6V2300NBR1 chip are NXP MRFE6VS25N, Freescale MRF6V4300NBR1, and Ampleon BLF188XR. These chips are also high-power RF transistors suitable for various RF power applications. -
Features
The MRF6V2300NBR1 is a high power RF MOSFET transistor designed for broadband RF amplifier applications. It features a frequency range of 1.8-512 MHz, a power output of 300W, a gain of 16dB, and a high efficiency of 70%. Additionally, it has a rugged design for reliable performance in harsh environments. -
Pinout
The MRF6V2300NBR1 is a power amplifier transistor with a pin count of 4. Pin 1 is the emitter, pin 2 is the gate, pin 3 is the collector, and pin 4 is the source. It is typically used for high power radar and MRI applications. -
Manufacturer
The MRF6V2300NBR1 is manufactured by NXP Semiconductors, a Dutch-American semiconductor manufacturer. NXP Semiconductors specializes in designing and producing a wide range of semiconductor solutions for automotive, industrial, and IoT applications. -
Application Field
The MRF6V2300NBR1 is commonly used in high-power RF amplifier applications, such as radar systems, military communications, and industrial heating systems. It is specifically designed for frequencies up to 2300 MHz and offers high power output and efficiency, making it suitable for a wide range of RF power amplification needs. -
Package
The MRF6V2300NBR1 chip is a surface mount package type with a form of flange-mount and a size of 2.000 x 1.310 x 0.510 inches.
Datasheet PDF
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