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NXP MRFE6S9060NR1

RF Mosfet 28 V 450 mA 880MHz 21.1dB 14W TO-270-2

ISO14001 ISO9001 DUNS

Brands: NXP

Mfr.Part #: MRFE6S9060NR1

Datasheet: MRFE6S9060NR1 Datasheet (PDF)

Package/Case: TO-270

Product Type: RF FETs, MOSFETs

RoHS Status:

Stock Condition: 9,458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for MRFE6S9060NR1 or email to us: Email: [email protected], we will contact you within 12 hours.

MRFE6S9060NR1 General Description

The MRFE6S9060NR1 is a powerful LDMOS transistor engineered for demanding applications in mobile radio, cellular base stations, and wireless communications systems. With a frequency range of 860-960 MHz, it can deliver an impressive 60 watts of output power, making it a highly capable and versatile component for high-power applications. Its high gain of 18.5 dB ensures superior linearity and efficiency, catering to the needs of advanced communication systems. Moreover, the transistor boasts a drain efficiency of 60%, effectively maximizing power output while minimizing heat dissipation, resulting in reliable and consistent performance

Specifications

Parameter Value Parameter Value
Manufacturer: NXP Product Category: RF MOSFET Transistors
RoHS: Details Transistor Polarity: N-Channel
Technology: Si Id - Continuous Drain Current: 1.5 A
Vds - Drain-Source Breakdown Voltage: 66 V Rds On - Drain-Source Resistance: -
Operating Frequency: 1 GHz Gain: 21.1 dB
Output Power: 14 W Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT
Package / Case: TO-270 Packaging: MouseReel
Brand: NXP Semiconductors Channel Mode: Enhancement
Configuration: Single Height: 2.08 mm
Length: 9.7 mm Moisture Sensitive: Yes
Product Type: RF MOSFET Transistors Series: MRFE6S9060N
Factory Pack Quantity: 500 Subcategory: MOSFETs
Type: RF Power MOSFET Vgs - Gate-Source Voltage: - 500 mV, 12 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V Width: 6.15 mm
Part # Aliases: 935309637528

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The MRFE6S9060NR1 chip is a high-power RF transistor designed for use in industrial and commercial applications. It operates at a frequency range of 900 MHz to 960 MHz and provides high linearity and efficiency. The chip offers a max output power of 60 watts, making it suitable for various RF power amplifier designs. It is commonly used in wireless communication systems and other high-power RF applications.
  • Equivalent

    There are no direct equivalent products of the MRFE6S9060NR1 chip. However, there are similar products available from other manufacturers, such as the MRF6S9060NR1 from Freescale Semiconductor or the BLF6G27-150 from NXP Semiconductors, which may serve as alternatives. These options should be researched for compatibility and specifications before considering them as replacements.
  • Features

    The MRFE6S9060NR1 is a high-power RF transistor that operates in the frequency range of 860-960 MHz. It has a power output of 60 Watts and offers high gain and efficiency. It is designed for use in applications such as mobile radio, base station, and broadcast systems.
  • Pinout

    The MRFE6S9060NR1 is a 60-watt RF power field-effect transistor (FET) with a pin count of 4. The pin configuration includes a gate, drain, and source, which are the standard pins found in power FET devices. This transistor is commonly used in high-frequency applications such as wireless communications and radar systems.
  • Manufacturer

    The manufacturer of the MRFE6S9060NR1 is NXP Semiconductors. NXP Semiconductors is a multinational semiconductor manufacturer that specializes in providing high-performance mixed-signal electronics and embedded systems solutions.
  • Application Field

    The MRFE6S9060NR1 is a high-frequency transistor designed for use in industrial and scientific applications, including laser drivers, plasma generators, and radio frequency (RF) amplifiers.
  • Package

    The MRFE6S9060NR1 chip has a package type called "MO-150AB" with a form factor known as "LDMOS." It is a high-voltage, high-power RF power field-effect transistor (FET) with a size of approximately 9.25mm x 22.6mm x 6.1mm.

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