Orders Over
$5000ST SCTWA50N120
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
Brands: STMicroelectronics, Inc
Mfr.Part #: SCTWA50N120
Datasheet: SCTWA50N120 Datasheet (PDF)
Package/Case: HiP-247-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 3,464 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SCTWA50N120 General Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Features
- Very tight variation of on-resistance vs. temperature
- Very high operating junction temperature capability (TJ = 200
°C) - Very fast and robust intrinsic body diode
- Low capacitance
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Manufacturer: | STMicroelectronics | Product Category: | MOSFET |
RoHS: | Y | Technology: | SiC |
Mounting Style: | Through Hole | Package / Case: | HiP-247-3 |
Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV | Id - Continuous Drain Current: | 65 A |
Rds On - Drain-Source Resistance: | 52 mOhms | Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
Vgs - Gate-Source Voltage: | 25 V | Qg - Gate Charge: | 122 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 200 C |
Pd - Power Dissipation: | 318 W | Configuration: | Single |
Channel Mode: | Enhancement | Tradename: | HiP247â?¢ |
Series: | SCTWA50N120 | Transistor Type: | 1 N-Channel |
Brand: | STMicroelectronics | Product Type: | MOSFET |
Factory Pack Quantity: | 600 | Subcategory: | MOSFETs |
Tags | SCTWA, SCTW, SCT | Pin Count | 3 |
Package Category | Transistor Outline, Vertical | Released Date | Nov 11, 2021 |
Last Modified Date | Mar 7, 2023 4:10 PM UTC |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Datasheet PDF
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
Exceptional quality and service are what we get with Ovaga and their top-notch electronic components.