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ST STB7NK80ZT4 48HRS

Product Description: STB7NK80ZT4 is an N-channel MOSFET with a voltage rating of 800V and a current capacity of 5

ISO14001 ISO9001 DUNS

Brands: Stmicroelectronics

Mfr.Part #: STB7NK80ZT4

Datasheet: STB7NK80ZT4 Datasheet (PDF)

Package/Case: D2PAK-3 (TO-263-3)

RoHS Status:

Stock Condition: 3,533 pcs, New Original

Product Type: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.527 $1.527
10 $1.328 $13.280
30 $1.203 $36.090
100 $1.076 $107.600
500 $1.019 $509.500
1000 $0.993 $993.000

In Stock: 3,533 PCS

- +

Quick Quote

Please submit RFQ for STB7NK80ZT4 or email to us: Email: [email protected], we will contact you within 12 hours.

STB7NK80ZT4 General Description

The STB7NK80ZT4 is ideal for use in power supplies, motor control, lighting systems, and other high-power applications. Its high voltage and current capabilities make it suitable for demanding industrial and automotive environments. Whether used in switching regulators or DC-DC converters, this MOSFET delivers reliable performance and efficiency

stb7nk80zt4

Features

  • High-speed switching and minimized power consumption
  • Low noise, high-performance switching solutions
  • Advanced circuitry for optimized efficiency
stb7nk80zt4

Application

  • Switching power devices
  • Automation control systems
  • Telecom equipment applications
stb7nk80zt4

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 5.2 A Rds On - Drain-Source Resistance 1.8 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 56 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 125 W
Channel Mode Enhancement Series STB7NK80ZT4
Brand STMicroelectronics Configuration Single
Fall Time 20 ns Forward Transconductance - Min 5 S
Height 4.6 mm Length 10.4 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 20 ns
Width 9.35 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The STB7NK80ZT4 chip is a power MOSFET transistor designed for high voltage applications. It offers a low on-state resistance and high switching speed, making it suitable for various power management circuits. The chip combines efficiency with robustness and is commonly used in power supplies, motor control, and lighting applications.
  • Equivalent

    Some equivalent products of the STB7NK80ZT4 chip are STB7NM60N, STB7NK80Z, STB7NK80ZT4E, STB7NK80ZT4, and STB7NC80ZT4.
  • Features

    STB7NK80ZT4 is a power MOSFET transistor that provides high voltage and current capability. It features low on-resistance, which reduces power losses and enhances efficiency. The transistor has excellent switching performance, enabling fast and responsive operation. Additionally, it is designed for easy integration, making it suitable for various power applications.
  • Pinout

    The STB7NK80ZT4 is a power MOSFET transistor from STMicroelectronics. It has a pin count of 3 and is designed for use in high voltage applications. The pins are typically used for connection to the drain, source, and gate of the transistor.
  • Manufacturer

    STB7NK80ZT4 is manufactured by STMicroelectronics. It is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor solutions. The company is involved in various industries, including automotive, industrial, and consumer electronics, offering products such as microcontrollers, sensors, power management components, and more.
  • Application Field

    The STB7NK80ZT4 is a power MOSFET transistor commonly used in applications such as switch-mode power supplies, motor control circuits, and lighting systems. It offers low on-resistance and high current capability, making it suitable for various high-power electronic devices that require efficient power switching and control.
  • Package

    The STB7NK80ZT4 chip has a package type of TO-220, a form of N-Channel Power MOSFET, and its size is approximately 10.4mm x 4.6mm x 9.15mm.

Datasheet PDF

Preliminary Specification STB7NK80ZT4 PDF Download

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