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ST STP25NM60ND

Robust and compact Trans MOSFET solution for high-reliability design

ISO14001 ISO9001 DUNS

Brands: Stmicroelectronics

Mfr.Part #: STP25NM60ND

Datasheet: STP25NM60ND Datasheet (PDF)

Package/Case: TO-220-3

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 3,661 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for STP25NM60ND or email to us: Email: [email protected], we will contact you within 12 hours.

STP25NM60ND General Description

The STP25NM60ND Power MOSFET is a reliable and efficient option for high power applications in industrial and automotive settings. With a maximum drain-source voltage of 600V and a continuous drain current of 25A, this N-channel MOSFET is well-suited for demanding tasks. Its low on-resistance of 0.15 ohms leads to decreased conduction losses and heightened efficiency, while its fast switching speed and low gate charge enable effective operation at high frequencies. Housed in a TO-220 package, the STP25NM60ND offers excellent thermal performance and easy PCB mounting, making it a practical solution for a wide range of applications. Furthermore, its high avalanche capability ensures reliable performance in harsh environments and during transient conditions, providing reassurance for users in demanding scenarios

stp25nm60nd

Features

  • Advanced logic controller
  • Ergonomic design software
  • High-performance computing kit
  • Sustainable energy solution suite
  • Intelligent data analytics tool
  • Cloud-based virtual assistant

Application

  • SMPS Components
  • Power Management
  • Motor Drive Solutions

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 21 A Rds On - Drain-Source Resistance 160 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 160 W
Channel Mode Enhancement Series STB25NM60N
Brand STMicroelectronics Configuration Single
Fall Time 40 ns Height 9.15 mm
Length 10.4 mm Product Type MOSFET
Rise Time 30 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 60 ns
Width 4.6 mm

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the STP25NM60ND component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   IRF840PBF

Brands :  

Package :  

Description :  

Part Number :   IRF3710ZPBF

Brands :  

Package :   TO-220AB

Description :   N CHANNEL MOSFET, 100V, 59A, TO-220AB, Transistor Polarity:N Channel, Continuous Drain Current Id:59A, Drain Source Voltage Vds:100V, On Resistance Rds(on):18mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V

Part Number :   STB55NF06LT4

Brands :  

Package :   D2PAK

Description :   N-CHANNEL 60V - 0.014 Ohm - 55A T0-220/TO-22OFP/D2PAK/I2PAK STRIPFET II POWER MOSFET,MOSFET N-Ch 60 Volt 55 Amp

Part Number :   FDPF33N25T

Brands :  

Package :   TO-220

Description :   Trans MOSFET N-CH 250V 33A Continuous Drain Current Id:20A, Drain Source Voltage Vds:250V

Part Number :   FQA24N50F

Brands :  

Package :   TO-3P

Description :   500V N-Channel MOSFET

Part Number :   2SK2545

Brands :  

Package :  

Description :  

Part Number :   AOTF25N60L

Brands :  

Package :  

Description :  

Part Number :   FCP25N60N

Brands :  

Package :   TO-220

Description :   MOSFET N-CH 600V TO-220-3

Part points

  • STP25NM60ND is a power MOSFET transistor designed for high efficiency and reliable switching applications. It has a maximum voltage rating of 600V and a continuous drain current of 25A. This chip is suitable for use in power supplies, motor control, and lighting applications.
  • Equivalent

    The equivalent products of the STP25NM60ND chip are the Mosfet N-Channel 600V 25A TO-220/TO-220FP PowerMESH™ II, STB40NM60ND, and the Htx208e. These chips have similar specifications and can be used as alternatives to the STP25NM60ND in different applications.
  • Features

    1. 600V power MOSFET 2. N-channel type 3. Suitable for high power applications 4. Low input capacitance 5. Low on-state resistance 6. Avalanche energy rated 7. Fast switching capability 8. TO-220 package 9. RoHS compliant
  • Pinout

    The STP25NM60ND is a 25A, 600V N-channel Power MOSFET with a TO-220 package. It has 3 pins: Gate (G), Drain (D), and Source (S). The pin count is 3, and the functions are to control the flow of current through the MOSFET by applying voltage to the Gate pin.
  • Manufacturer

    STMicroelectronics is the manufacturer of the STP25NM60ND. It is a global semiconductor company that designs, manufactures, and markets a range of electronic components and systems, including semiconductors, discrete devices, and integrated circuits for various applications in automotive, industrial, communication, and consumer markets.
  • Application Field

    The STP25NM60ND is commonly used in various applications such as high-power SMPS, PFC, welding, induction heating, and motor control systems. It is suitable for applications where high performance and efficiency are required, making it ideal for use in industrial, automotive, and consumer electronics.
  • Package

    The STP25NM60ND chip is available in a TO-220 package type, a through-hole form, and has a size of 10.3mm x 4.6mm x 3.85mm.

Datasheet PDF

Preliminary Specification STP25NM60ND PDF Download

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