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$5000ST SCTWA60N120G2-4
N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
Brands: STMicroelectronics, Inc
Mfr.Part #: SCTWA60N120G2-4
Datasheet: SCTWA60N120G2-4 Datasheet (PDF)
Package/Case: HiP247-4
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 3,214 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SCTWA60N120G2-4 General Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Features
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 4 | feature-supplier-package | HIP-247 |
| feature-standard-package-name1 | feature-cecc-qualified | ||
| feature-esd-protection | feature-escc-qualified | ||
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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![Product]( "Product")
Step1 :Product
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![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SCTWA60N120G2-4 is a silicon carbide power MOSFET designed for high-frequency and efficiency applications. It offers low switch and conduction losses, making it suitable for use in power supplies, motor drives, and renewable energy systems. With a voltage rating of 1200V and a current rating of 60A, this chip is ideal for high-power applications that require fast switching speeds and reliable performance.
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Equivalent
The equivalent products of SCTWA60N120G2-4 chip are Infineon's IGBT modules with similar specifications, such as FF600R17ME4, FF450RA17KE3, and FF450RA17KF4. They are all high-power IGBT modules designed for industrial applications with similar current and voltage ratings. -
Features
Some features of SCTWA60N120G2-4 include a VCEsat of 1.95V, a maximum continuous collector current of 60A, a maximum collector-emitter voltage of 1200V, and a switching frequency of 20kHz. It is a silicon carbide trench Schottky diode with low switching losses and high efficiency. -
Pinout
The SCTWA60N120G2-4 is a silicon carbide power MOSFET with a TO-247-4 package. It has 3 pins: gate (G), source (S), and drain (D). It is designed for high-power applications due to its 1200V voltage rating and 60A current rating. -
Manufacturer
Infineon Technologies AG is the manufacturer of SCTWA60N120G2-4. Infineon is a German semiconductor manufacturer that focuses on power and chip card security. They specialize in providing products for applications such as automotive, industrial, and digital power control. -
Application Field
SCTWA60N120G2-4 is commonly used in high power applications such as industrial motor drives, power supplies, renewable energy systems, and electric vehicle charging. It is suitable for use in applications requiring high voltage and high current handling capabilities, making it a versatile choice for various power electronics applications. -
Package
The SCTWA60N120G2-4 chip is a power module with a TO-247 package type. It has a single form and a size of 30.0mm x 50.7mm.
Datasheet PDF
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365 days quality guarantee for all products
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