Images are for reference only See Product Specifications
Orders Over
$5000
ST SCTWA70N120G2V-4
N-Channel 1200 V 91A (Tc) 547W Through Hole TO-247-4
Brands: STMicroelectronics, Inc
Mfr.Part #: SCTWA70N120G2V-4
Datasheet: SCTWA70N120G2V-4 Datasheet (PDF)
Package/Case: HiP247-4
RoHS Status:
Stock Condition: 3,789 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $20.475 | $20.475 |
| 30 | $19.622 | $588.660 |
In Stock: 3,789 PCS
SCTWA70N120G2V-4 General Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Features
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Source sensing pin for increased efficiency
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 4 | feature-supplier-package | HIP-247 |
| feature-standard-package-name1 | feature-cecc-qualified | ||
| feature-esd-protection | feature-escc-qualified | ||
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
![Product]( "Product")
Step1 :Product
-
![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
-
![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
-
![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
-
![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
-
![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The SCTWA70N120G2V-4 chip is a power mosfet that is designed for high-speed switching applications. it offers low on-state resistance and excellent switching performance, making it suitable for use in a wide range of power electronics applications. the chip features advanced technology and a compact package, making it a reliable and efficient choice for various electronic systems.
-
Features
The main features of the SCTWA70N120G2V-4 are: 1. silicon carbide power mosfet. 2. high blocking voltage of 1200v. 3. low on-resistance for efficient power handling. 4. suitable for high-frequency and high-temperature applications. 5. enhanced gate oxide for improved ruggedness. 6. low gate charge for fast switching and reduced power losses. -
Pinout
The SCTWA70N120G2V-4 is a power mosfet with a to-247 package. it has 3 pins: gate, drain, and source. the gate pin controls the flow of current between the drain and source, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the SCTWA70N120G2V-4 is infineon technologies ag. infineon is a german semiconductor manufacturer that specializes in producing integrated circuits and system solutions for various industries, including automotive, industrial, and power electronics. -
Application Field
The SCTWA70N120G2V-4 is a silicon carbide power mosfet that can be used in various applications, including high-power converters, motor drives, solar inverters, and electric vehicles. it offers low on-resistance and high switching capability, making it suitable for high-performance and efficiency requirements in these fields. -
Package
The SCTWA70N120G2V-4 chip is available in a to-247 package type with a 3-pin form and a size of approximately 21.34mm x 15.49mm.
Datasheet PDF
We provide high quality products, thoughtful service and after sale guarantee
-
![Product]( "Product")
We have rich products, can meet your various needs.
-
![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
-
![shipping]( "shipping")
Lowest international shipping fee starts from $0.00
-
![guarantee]( "guarantee")
365 days quality guarantee for all products
Overall satisfied with the purchase, but some of the components were not exactly what we were expecting.