Orders Over
$5000SI2301DS-T1
MOSFET capable of handling 20 Volts, with a current rating of 2.3 Amps and a power dissipation of 1.25 Watts
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![ISO9001](/img/about/iso9001.png)
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Brands: VISHAY SILICONIX
Mfr.Part #: SI2301DS-T1
Datasheet: SI2301DS-T1 Datasheet (PDF)
Package/Case: SOT-23-3
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 8,476 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI2301DS-T1 General Description
The SI2301DS-T1 is a versatile P-channel MOSFET that excels in low voltage applications. With its impressive -20 volt drain-source voltage rating and continuous -2.6 ampere drain current, this MOSFET is a reliable choice for efficient power management. Its low on-resistance of 0.09 ohms ensures minimal power loss, making it a cost-effective solution for a wide range of electronic designs
Specifications
Parameter | Value | Parameter | Value |
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Rohs Code | No | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | VISHAY SILICONIX | Part Package Code | SOT-23 |
Package Description | TO-236, 3 PIN | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Samacsys Manufacturer | Vishay | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V | Drain Current-Max (ID) | 2.3 A |
Drain-source On Resistance-Max | 0.13 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-236 | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e0 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | P-CHANNEL | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN LEAD |
Terminal Form | GULL WING | Terminal Position | DUAL |
Transistor Element Material | SILICON |
Shipping
Shipping Type | Ship Fee | Lead Time | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI2301DS-T1 is a power management chip commonly used in electronic devices to regulate power consumption and voltage levels. It is designed to improve efficiency and performance while minimizing heat generation. The chip is small in size and can be integrated into various electronic circuits to support stable power supply.
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Equivalent
Some equivalent products to the SI2301DS-T1 chip include SI2301BDS-T1-GE3, AO3401A, and SI2301B-DS-T1-E3. These chips are all P-channel MOSFET transistors with similar specifications and characteristics. -
Features
- N-channel MOSFET - Drain-Source Voltage: 20V - Continuous Drain Current: 2.4A - Low on-resistance - Small form factor (SOT-23 package) - Low threshold voltage - Suitable for low-power applications - RoHS compliant -
Pinout
The SI2301DS-T1 is a dual N-channel enhancement mode field-effect transistor (FET) with a SOT-23 package. It has a pin count of 3, with the pin functions as follows: Pin 1 (Source 1), Pin 2 (Gate 1), Pin 3 (Drain 1) for one FET and Pin 4 (Source 2), Pin 5 (Gate 2), Pin 6 (Drain 2) for the other FET. -
Manufacturer
The manufacturer of the SI2301DS-T1 is Vishay Siliconix. It is a global company that produces a wide range of discrete semiconductors and passive electronic components. Vishay Siliconix specializes in designing and manufacturing power MOSFETs, analog switches, and integrated circuits for various industries, including automotive, telecommunications, computing, and consumer electronics. -
Application Field
The SI2301DS-T1 is a small-signal MOSFET transistor used primarily for voltage regulation, signal amplification, and switching applications in low-voltage circuits, such as portable electronic devices, power management systems, and sensor interfaces. Its compact size makes it suitable for space-constrained designs where efficiency and performance are essential. -
Package
The SI2301DS-T1 chip is offered in a SOT-23 package type. It is a N-channel MOSFET transistor that comes in a surface-mount form. The chip has a size of 2.9mm x 1.3mm x 1.0mm.
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